660-V/1.99-m$\Omega $.cm$^{\text{2}}$ Low-Current-Collapse p-GaN/AlGaN/GaN HEMTs With Selective Regrowth AlN/AlGaN Strain Layers

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Bibliographic Details
Published in:IEEE transactions on electron devices 2023, p.1-6
Main Authors: Shen, Jingyu, Yang, Chao, Jing, Liang, Guo, Jingwei, Li, Ping, Wu, Hao, Hu, Shengdong
Format: Article
Language:English
Online Access:Get full text
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ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2023.3339712