Dynamic R ON Degradation in AlGaN/GaNMIS-HEMTs With Si 3 N 4 or Si 3 N 4 /ZrO 2 Passivation Layer

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Bibliographic Details
Published in:IEEE transactions on electron devices 2024-05, Vol.71 (5), p.2914-2919
Main Authors: Liang, Ye, Zhang, Yuanlei, He, Xiuyuan, Zhao, Yinchao, Yan, Jiudun, Wang, Mingxiang, Liu, Wen
Format: Article
Language:English
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ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2024.3372933