Fine-Tuning Hole Collection via Metal Pseudo-Halogenated Thin-Film Treatment for Propelling Advancements in Versatile Platforms

Specialized transparent electrodes coated with polymer thin films have applications in energy storage and conversion systems. However, the work function (WF) and surface roughness of these thin-film-coated electrodes require further enhancement. In particular, metal pseudo-halogenated thin-film elec...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 2024-08, Vol.71 (8), p.4723-4731
Main Authors: Lee, Min Jong, Oh, Seunghyun, Ahsan Saeed, Muhammad, Kang, Yelim, Min Lee, Gyeong, Ahn, Hyungju, Kim, Yunsang, Shim, Jae Won
Format: Article
Language:English
Subjects:
Capacitors
Coated electrodes
Current density
Electrode work function (WF)
Electrodes
Energy storage
Indium tin oxide
Indium tin oxides
Insulators
Leakage current
Light emitting diodes
Metals
metal–insulator–metal (MIM) capacitors
Meters
organic photovoltaics (OPVs)
Photovoltaic cells
Polymer films
Substrates
Surface roughness
Surface treatment
Thin films
Thiocyanates
transparent electrode
Work functions
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Specialized transparent electrodes coated with polymer thin films have applications in energy storage and conversion systems. However, the work function (WF) and surface roughness of these thin-film-coated electrodes require further enhancement. In particular, metal pseudo-halogenated thin-film electrodes demonstrate suitable electrochemical characteristics for application in organic photovoltaics (OPVs) and metal-insulator-metal (MIM) capacitors. In this study, we presented copper(I) thiocyanate (CuSCN)-coated indium tin oxide (ITO) electrodes that exhibit absorption across the UV-visible region. The OPV containing CuSCN-based hole-transporting layers achieved an output power density of 87.6~\pm ~1~\mu W/cm2 and a high fill factor of 78.2% under light-emitting-diode illumination at 1000 lx (2700 K). The leakage current density of the CuSCN-MIM capacitor decreased from 40.12 to 0.17~\mu A/cm2 compared to the conventional Ag-based MIM capacitor at −2 V. It showed a leakage current density that was 235 times lower. Our findings highlight the influence of precise energy-level alignment induced by increasing the WF on enhancing the performance of hybrid organic-inorganic electronic devices.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2024.3408773