Role of Nitrogen in Suppressing Interfacial States Generation and Improving Endurance in Ferroelectric Field-Effect Transistors

In this study, we investigate the impact of nitridation in Hf _{{0}.{5}} Zr _{{0}.{5}} O2-based ferroelectric field-effect transistors (FeFETs) with a SiON interfacial layer (IL). We fabricated the SiON IL using decoupled plasma nitridation. Compared with the SiOx interlayer, the SiON interlayer can...

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Published in:IEEE transactions on electron devices 2024-08, Vol.71 (8), p.5081-5088
Main Authors: Dai, Saifei, Li, Songwei, Xu, Shuangshuang, Tian, Fengbin, Chai, Junshuai, Duan, Jiahui, Xiong, Wenjuan, Xiang, Jinjuan, Han, Kai, Wang, Yanrong, Xu, Hao, Zhang, Jing, Wang, Xiaolei, Wang, Wenwu
Format: Article
Language:English
Subjects:
Annealing
Electric fields
Endurance
FeFETs
ferroelectric field-effect transistor (FeFET)
Ferroelectric materials
Ferroelectricity
ferroelectrics
Field effect transistors
Interlayers
Logic gates
nitridation
Nitrogen
Presence network agents
Semiconductor devices
Silicon
Silicon oxynitride
Zirconium
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Summary:In this study, we investigate the impact of nitridation in Hf _{{0}.{5}} Zr _{{0}.{5}} O2-based ferroelectric field-effect transistors (FeFETs) with a SiON interfacial layer (IL). We fabricated the SiON IL using decoupled plasma nitridation. Compared with the SiOx interlayer, the SiON interlayer can reduce interfacial state density (D _{\text {it}}\text {)} at the interlayer/Si interface, suppress the degradation of Ion and subthreshold swing (SS), and improve endurance under the same electric field across the IL. The physical origin is that the nitridation can reduce trap generation rates at both the Hf _{{0}.{5}} Zr _{{0}.{5}} O2/interlayer and interlayer/Si interfaces.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2024.3409203