Area and Energy-Efficient Quantum Tunneling-Based Thermal Sensor on 45nm RFSOI Technology

The compact and energy-efficient integrated temperature sensors are crucial for temperature monitoring and control. In this work, we propose a novel area and energy-efficient band-to-band tunneling (BTBT)-based oscillator for temperature sensing applications. It utilizes oscillation frequency as a m...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2024-11, Vol.71 (11), p.7208-7212
Main Authors: Patil, Shubham, Kadam, Abhishek, Sonawane, Jay, Deshmukh, Shreyas, Gaurav, R., Kumar Singh, Ajay, Lashkare, Sandip, Deshpande, Veeresh, Somappa, Laxmeesha, Ganguly, Udayan
Format: Article
Language:English
Subjects:
Band-to-band tunneling (BTBT)
Energy efficiency
Junctions
Linearity
Logic gates
Mixed mode simulation
MOSFET
oscillator
Oscillators
Quantum tunnelling
SOI
TCAD mixed mode simulation
Temperature dependence
Temperature measurement
temperature sensor
Temperature sensors
Transistors
Tunneling
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Summary:The compact and energy-efficient integrated temperature sensors are crucial for temperature monitoring and control. In this work, we propose a novel area and energy-efficient band-to-band tunneling (BTBT)-based oscillator for temperature sensing applications. It utilizes oscillation frequency as a metric for temperature sensing. The linearity in BTBT current with temperature can enable sensing with a simple readout mechanism. The initially designed circuit is simulated and analyzed in TCAD using mixed-mode simulation, followed by the fabrication of the proposed circuit using GF 45nm RFSOI technology. Measurements show the BTBT oscillator's quasi-linear response as a function of temperature. Our proposed work enables the area ( 0.32~\mu \text { m}^{{2}} ) and energy-efficient temperature sensor (2.5 fJ/cycle) for the energy and area-constraint edge applications.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2024.3469177