High-Frequency Electromagnetic Simulation and Optimization for GaN-HEMT Power Amplifier IC

Rapid increase in operating frequencies and power density necessitate the importance of examining electromagnetic compatibility/electromagnetic emissions (EMEs) from high-frequency and high-power integrated circuits (ICs). In this paper, a simulation method is demonstrated to study the EME using gal...

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Bibliographic Details
Published in:IEEE transactions on electromagnetic compatibility 2019-04, Vol.61 (2), p.564-571
Main Authors: Sangwan, Vivek, Kapoor, Dipesh, Cher Ming Tan, Chia Han Lin, Hsien-Chin Chiu
Format: Article
Language:English
Subjects:
Computational modeling
Computer simulation
Electromagnetic compatibility
Electromagnetic compatibility/electromagnetic emission (EMC/EME)
Electron mobility
gallium nitride (GaN) high electron mobility transistor (HEMT) power amplifier
Gallium nitrides
Integrated circuit modeling
Integrated circuits
Layout
Layouts
Model testing
Optimization
Optimization techniques
Power amplifiers
Power integrated circuits
Response surface methodology
response surface methodology (RSM)
Semiconductor device modeling
Simulation
Solid modeling
Transistors
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Summary:Rapid increase in operating frequencies and power density necessitate the importance of examining electromagnetic compatibility/electromagnetic emissions (EMEs) from high-frequency and high-power integrated circuits (ICs). In this paper, a simulation method is demonstrated to study the EME using gallium nitride high electron mobility transistor power amplifier IC chip as a device under test. Simulation model is developed by collaborating a high-frequency structure simulator with a Keysight Advance Design System for simulation of three-dimensional layout of IC. The simulated EME results are verified with experimental measurement results; the hotspots obtained with higher EME as identified by a near-field scanner and simulation results are identical. With this simulation method, optimization is done using a response surface methodology to reduce the EME for the IC chip. It is found that small changes in the IC layout can make a significant difference in the EME. Simulation model developed with RSM optimization technique opens a gateway for the IC industry to investigate EME of their chip design without going through a costly and time-consuming process of fabrication for testing its EME.
ISSN:0018-9375
1558-187X
DOI:10.1109/TEMC.2018.2820202