Design and Realization of Highly Integrated Isolated DC/DC Microconverter

This paper deals with the design and the realization of an integrated isolated HF dc-to-dc converter for low-voltage and low-power conditioning applications (3.3 V and 1 W) including galvanic isolation. It is based on the 3-D integration of several elementary silicon dies in which essential componen...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on industry applications 2011-03, Vol.47 (2), p.930-938
Main Authors: Deleage, Olivier, Crebier, Jean-Christophe, Brunet, Magali, Lembeye, Yves, Hung Tran Manh
Format: Article
Language:English
Subjects:
Capacitors
CMOS integrated circuits
Converters
dc-dc power conversion
Design engineering
Dies
Direct current
Electric power
Engineering Sciences
HF transformers
hybrid integrated circuit packaging
Inductance
Inductors
Inverters
Resistance
Silicon
thin-film inductors
Transformers
Windings
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper deals with the design and the realization of an integrated isolated HF dc-to-dc converter for low-voltage and low-power conditioning applications (3.3 V and 1 W) including galvanic isolation. It is based on the 3-D integration of several elementary silicon dies in which essential components such as the inverter, the rectifier, the HF transformer, the input and output capacitors, and the output inductor have been integrated. The paper deals with the silicon integration of all these elements, with the presentation of our work being related with the state of the art. Then, it focuses on an estimate of the whole converter functional performance at 1-MHz switching frequency. Practical but partial implementation was carried out. The inverter and the rectifier are designed in CMOS technology (Austria Micro Systems 0.35 μm) and have been optimized to operate at HF (1 MHz) to reduce the size of passive devices. We have monolithically integrated all that is necessary for this function. The transformer, as well as the inductor and the capacitors, is also integrated on separate silicon dies. Their integration is discussed, as well as their design and practical characterization. Based on a distributed construction, the overall converter efficiency is estimated in simulation based on practical characterizations. It appears that correct efficiency with a reasonable silicon surface and volume can be reached.
ISSN:0093-9994
1939-9367
DOI:10.1109/TIA.2010.2103390