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Three-Phase LLC Series Resonant DC/DC Converter Using SiC MOSFETs to Realize High-Voltage and High-Frequency Operation
SiC MOSFETs are applied to constitute a three-phase, 5-kW LLC series resonant dc/dc converter with isolation transformers. A switching frequency of around 200 kHz for the transistors successfully reduces the volume of these isolation transformers, whereas insulated-gate bipolar transistors (IGBTs) a...
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Published in: | IEEE transactions on industrial electronics (1982) 2016-04, Vol.63 (4), p.2103-2110 |
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container_end_page | 2110 |
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container_title | IEEE transactions on industrial electronics (1982) |
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creator | Nakakohara, Yusuke Otake, Hirotaka Evans, Tristan M. Yoshida, Tomohiko Tsuruya, Mamoru Nakahara, Ken |
description | SiC MOSFETs are applied to constitute a three-phase, 5-kW LLC series resonant dc/dc converter with isolation transformers. A switching frequency of around 200 kHz for the transistors successfully reduces the volume of these isolation transformers, whereas insulated-gate bipolar transistors (IGBTs) are not capable of achieving such a high switching speed. The high-voltage tolerance of SiC MOSFETs, 1200 V, enables increasing the input voltage up to 600 V. High-voltage tolerance, on the other hand, is not compatible with low on-resistance for Si MOSFETs. A three-phase circuit topology is used to achieve up to 5 kW of power capacity for the converter and reduce per-phase current at the same time. Current-balancing transformers among these three phases effectively suppress a maximum peak current from arising in the circuit, a technique that miniaturizes the input and output capacitances. The conversion efficiency of the converter reaches 97.6% at 5-kW operation. |
doi_str_mv | 10.1109/TIE.2015.2499721 |
format | article |
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A switching frequency of around 200 kHz for the transistors successfully reduces the volume of these isolation transformers, whereas insulated-gate bipolar transistors (IGBTs) are not capable of achieving such a high switching speed. The high-voltage tolerance of SiC MOSFETs, 1200 V, enables increasing the input voltage up to 600 V. High-voltage tolerance, on the other hand, is not compatible with low on-resistance for Si MOSFETs. A three-phase circuit topology is used to achieve up to 5 kW of power capacity for the converter and reduce per-phase current at the same time. Current-balancing transformers among these three phases effectively suppress a maximum peak current from arising in the circuit, a technique that miniaturizes the input and output capacitances. 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A switching frequency of around 200 kHz for the transistors successfully reduces the volume of these isolation transformers, whereas insulated-gate bipolar transistors (IGBTs) are not capable of achieving such a high switching speed. The high-voltage tolerance of SiC MOSFETs, 1200 V, enables increasing the input voltage up to 600 V. High-voltage tolerance, on the other hand, is not compatible with low on-resistance for Si MOSFETs. A three-phase circuit topology is used to achieve up to 5 kW of power capacity for the converter and reduce per-phase current at the same time. Current-balancing transformers among these three phases effectively suppress a maximum peak current from arising in the circuit, a technique that miniaturizes the input and output capacitances. The conversion efficiency of the converter reaches 97.6% at 5-kW operation.</description><subject>Circuit faults</subject><subject>current balancing transformers</subject><subject>LLC resonant converter</subject><subject>MOSFET</subject><subject>Power conversion</subject><subject>SiC MOSFETs</subject><subject>Silicon</subject><subject>Silicon carbide</subject><subject>Switches</subject><subject>three phase</subject><subject>zero current switching (ZCS)</subject><subject>Zero voltage switching</subject><subject>zero voltage switching (ZVS)</subject><issn>0278-0046</issn><issn>1557-9948</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>ESBDL</sourceid><recordid>eNo9kNFrwjAQh8PYYM7tfbCXwJ6rubRpmsdR5xQ6HFP3WtL0qhHXuqQK7q9fRdnTwfH9fnd8hDwCGwAwNVxMXwecgRjwSCnJ4Yr0QAgZKBUl16THuEwCxqL4ltx5v2EMIgGiRw6LtUMMPtbaI82ylM7RWfT0E31T67qlo3Q4Smna1Ad0LTq69LZe0blN6ftsPn5deNo2Ha239hfpxK7WwVezbfUKqa7L82Ls8GePtTnS2Q6dbm1T35ObSm89Plxmnyy7rnQSZLO3afqSBSZUqg10qGOlClWZSHOhYlYAVlKXFUIsmKmSiMexQGMYlIbrkiVGxhAywIKXUJiwT57PvTvXdD_4Nt80e1d3J3OQSawi4AAdxc6UcY33Dqt85-y3dsccWH6ym3d285Pd_GK3izydIxYR_3EZcglKhH8euHTq</recordid><startdate>20160401</startdate><enddate>20160401</enddate><creator>Nakakohara, Yusuke</creator><creator>Otake, Hirotaka</creator><creator>Evans, Tristan M.</creator><creator>Yoshida, Tomohiko</creator><creator>Tsuruya, Mamoru</creator><creator>Nakahara, Ken</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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A switching frequency of around 200 kHz for the transistors successfully reduces the volume of these isolation transformers, whereas insulated-gate bipolar transistors (IGBTs) are not capable of achieving such a high switching speed. The high-voltage tolerance of SiC MOSFETs, 1200 V, enables increasing the input voltage up to 600 V. High-voltage tolerance, on the other hand, is not compatible with low on-resistance for Si MOSFETs. A three-phase circuit topology is used to achieve up to 5 kW of power capacity for the converter and reduce per-phase current at the same time. Current-balancing transformers among these three phases effectively suppress a maximum peak current from arising in the circuit, a technique that miniaturizes the input and output capacitances. 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source | IEEE Electronic Library (IEL) Journals |
subjects | Circuit faults current balancing transformers LLC resonant converter MOSFET Power conversion SiC MOSFETs Silicon Silicon carbide Switches three phase zero current switching (ZCS) Zero voltage switching zero voltage switching (ZVS) |
title | Three-Phase LLC Series Resonant DC/DC Converter Using SiC MOSFETs to Realize High-Voltage and High-Frequency Operation |
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