A Novel Approach to Accurately Determine the t Parameter of Thyristors

The continued use of high-voltage thyristor devices in industry and their increased use in high-voltage dc transmission systems call for more attention to the properties of these devices. One of the important thyristor parameters is their turn-off time t q , which can be a limiting factor when apply...

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Bibliographic Details
Published in:IEEE transactions on industrial electronics (1982) 2017-01, Vol.64 (1), p.206-216
Main Authors: Garrab, Hatem, Jedidi, Atef, Morel, Herve, Besbes, Kamel
Format: Article
Language:English
Subjects:
Circuit design
Converters
Current measurement
Electric potential
Finite-element method (FEM)
Insulated gate bipolar transistors
Logic gates
modeling
MOSFET
Operating temperature
Semiconductor devices
simulation
Switching
Temperature measurement
Thyristors
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Summary:The continued use of high-voltage thyristor devices in industry and their increased use in high-voltage dc transmission systems call for more attention to the properties of these devices. One of the important thyristor parameters is their turn-off time t q , which can be a limiting factor when applying thyristors at elevated switching frequencies. Hence, the accurate measurement of tq and its variation versus the operating conditions remains a crucial task for thyristor converters operating at elevated switching frequencies. In this paper, a proper test circuit for measuring this parameter with a high level of accuracy has been designed and built. Owing to the test circuit specificity, the variation effects of several electrical and physical constraints, such as the forward current IF , the reverse applied voltage VR, the operating temperature To, and the ramp rate of the forward reapplied voltage dVD/dt, on the tq parameter of thyristors are also studied and analyzed based on the physics of semiconductor devices and associated simulations.
ISSN:0278-0046
1557-9948
DOI:10.1109/TIE.2016.2609381