A Novel Boost Marx Pulse Generator Based on Single-Driver Series-Connected SiC MOSFETs

This article presents a new type of all solid state boost Marx pulse generator. On the basis of the classic pulse forming Marx circuit, without changing the voltage level of each voltage module, a new switch is added for the isolated inductor energy storage and recovery, so as to realize the output...

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Bibliographic Details
Published in:IEEE transactions on industrial electronics (1982) 2024-02, Vol.71 (2), p.2070-2079
Main Authors: Yu, Liang, Sun, Wenjie, Yao, Chenguo, Dong, Shoulong, Li, Kai, He, Dazhao, Jin, Yaobin, Bo, Zongqing
Format: Article
Language:English
Subjects:
Capacitors
Circuits
Energy storage
Field effect transistors
High voltage (HV) nanosecond pulse
High voltages
High-voltage techniques
inductor isolation
Inductors
Marx generator
Metal oxide semiconductors
MOSFET
MOSFETs
Nanosecond pulses
Pulse generation
Pulse generators
Semiconductor devices
series-connected silicon carbide (SiC) metal-oxide-semiconductor field effect transistor (<sc xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">mosfet s)
Silicon carbide
Switches
Voltage control
Voltage pulses
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Summary:This article presents a new type of all solid state boost Marx pulse generator. On the basis of the classic pulse forming Marx circuit, without changing the voltage level of each voltage module, a new switch is added for the isolated inductor energy storage and recovery, so as to realize the output of high-voltage nanosecond pulses. At the same time, in order to improve the voltage level of the semiconductor switch and break the limitation of the voltage of the single-stage pulse forming circuit, a series-connected silicon carbide (SiC) metal-oxide-semiconductor field effect transistor ( mosfet s) with a single external driver is designed. The series switch has a simple structure with few components and is extremely easy to use in a modular high voltage pulse generator. Its theoretical feasibility is verified by mathematical model and circuit simulation, and the ten-stage prototype is built in this article. Under the condition of input dc voltage of 500 V, it can output 18 kV high voltage pulses of 200-1200 ns, and the gain multiple has reached 36 times.
ISSN:0278-0046
1557-9948
DOI:10.1109/TIE.2023.3250761