A Novel Boost Marx Pulse Generator Based on Single-Driver Series-Connected SiC MOSFETs

• Published in: IEEE transactions on industrial electronics (1982) 2024-02, Vol.71 (2), p.2070-2079
• Main Authors: Yu, Liang, Sun, Wenjie, Yao, Chenguo, Dong, Shoulong, Li, Kai, He, Dazhao, Jin, Yaobin, Bo, Zongqing
• Format: Article
• Language: English
• Subjects: Capacitors; Circuits; Energy storage; Field effect transistors; High voltage (HV) nanosecond pulse; High voltages; High-voltage techniques; inductor isolation; Inductors; Marx generator; Metal oxide semiconductors; MOSFET; MOSFETs; Nanosecond pulses; Pulse generation; Pulse generators; Semiconductor devices; series-connected silicon carbide (SiC) metal-oxide-semiconductor field effect transistor (<sc xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">mosfet s); Silicon carbide; Switches; Voltage control; Voltage pulses
• ISSN: 0278-0046; 1557-9948
• DOI: 10.1109/TIE.2023.3250761

This article presents a new type of all solid state boost Marx pulse generator. On the basis of the classic pulse forming Marx circuit, without changing the voltage level of each voltage module, a new switch is added for the isolated inductor energy storage and recovery, so as to realize the output of high-voltage nanosecond pulses. At the same time, in order to improve the voltage level of the semiconductor switch and break the limitation of the voltage of the single-stage pulse forming circuit, a series-connected silicon carbide (SiC) metal-oxide-semiconductor field effect transistor ( mosfet s) with a single external driver is designed. The series switch has a simple structure with few components and is extremely easy to use in a modular high voltage pulse generator. Its theoretical feasibility is verified by mathematical model and circuit simulation, and the ten-stage prototype is built in this article. Under the condition of input dc voltage of 500 V, it can output 18 kV high voltage pulses of 200-1200 ns, and the gain multiple has reached 36 times.