New method for potential well measurements using bubble runout in ion-implanted bubble devices

A new potential well measurement method has been developed by the use of bubble runout phenomena around bubble propagation patterns. The new method reveals not only bubble potential well distributions but also magnetization distributions around the propagation patterns by observing a domain extensio...

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Bibliographic Details
Published in:IEEE transactions on magnetics 1985-11, Vol.21 (6), p.2676-2679
Main Author: Urai, H.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Hydrogen
Magnetic anisotropy
Magnetic devices
Magnetic field measurement
Magnetic heads
Magnetic materials
Perpendicular magnetic anisotropy
Potential well
Saturation magnetization
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Shape
Stability
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Summary:A new potential well measurement method has been developed by the use of bubble runout phenomena around bubble propagation patterns. The new method reveals not only bubble potential well distributions but also magnetization distributions around the propagation patterns by observing a domain extension direction after bubble runout. The method has been applied to an ion-implanted bubble device for 1-μm bubbles and has verified the role of stress relief anisotropy for magnetic charge distributions along nonimplanted pattern edges.
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.1985.1064190