Spin Torque and Field-Driven Perpendicular MRAM Designs Scalable to Multi-Gb/Chip Capacity

In this paper, we present a micromagnetic analysis of two novel magnetoresistive memory designs, both of which utilize the material-intrinsic perpendicular uniaxial magnetic anisotropy for retaining memory states. The analysis shows that such perpendicular memory element design allows the utilizatio...

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Bibliographic Details
Published in:IEEE transactions on magnetics 2006-10, Vol.42 (10), p.2739-2741
Main Authors: Zhu, X., Zhu, J.-G.
Format: Article
Language:English
Subjects:
Anisotropic magnetoresistance
Cross-disciplinary physics: materials science
rheology
Design engineering
Direct current
Exact sciences and technology
Magnetic analysis
Magnetic anisotropy
Magnetic films
Magnetism
Magnetization
Magnetoresistive memory
Magnetoresistive random access memory
Materials science
Micromagnetics
Momentum transfer
MRAM
Other topics in materials science
perpendicular anisotropy
Physics
Scalability
Soft magnetic materials
spin momentum transfer
spin torque
Switching
Torque
Tunneling magnetoresistance
Utilization
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Description
Summary:In this paper, we present a micromagnetic analysis of two novel magnetoresistive memory designs, both of which utilize the material-intrinsic perpendicular uniaxial magnetic anisotropy for retaining memory states. The analysis shows that such perpendicular memory element design allows the utilization of thick magnetic film, thereby enabling downsize scalability of each memory element while maintaining sufficient thermal stability. One of the designs is to utilize direct current injection for switching the memory states via the effect of spin momentum transfer. The other design utilizes current-generated field for switching. The performance characteristics of both designs are reported
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2006.878861