Exchange Anisotropy in Epitaxial

(001) IrMn/CoFe epitaxial bilayers were fabricated on Si substrates at room temperature by using Cu underlayers. A double shifted loop was observed at the axis perpendicular to the exchange bias direction. The dependence of anisotropy on the IrMn thickness was studied. The magnetization reversal was...

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Bibliographic Details
Published in:IEEE transactions on magnetics 2006-10, Vol.42 (10), p.3005-3007
Main Authors: Yang, C.-Y., Lai, C.-H., Huang, S.-H., Huang, H.-E., Bor, H.-Y.
Format: Article
Language:English
Subjects:
Anisotropic magnetoresistance
Anisotropy
Coiling
Coils
Computer simulation
Crystallization
double shifted loop
Epitaxy
exchange bias
IrMn/CoFe
Iron
Magnetic tunneling
Magnetism
Magnetization reversal
Mathematical analysis
Silicon substrates
Substrates
Temperature
Tunneling magnetoresistance
Vectors (mathematics)
Vibration measurement
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Description
Summary:(001) IrMn/CoFe epitaxial bilayers were fabricated on Si substrates at room temperature by using Cu underlayers. A double shifted loop was observed at the axis perpendicular to the exchange bias direction. The dependence of anisotropy on the IrMn thickness was studied. The magnetization reversal was investigated by using vector coil measurements and calculations based on Stoner-Wohlfarth model. A combination of reversible and irreversible rotation was observed for the magnetization reversal along the hard axis. Critical angles and fields at which irreversible rotation occurred were obtained through simulations
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2006.879155