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Spin Transfer Switching and MR Properties of Co/Pt Multilayered Free Layers for Submicron Sized Magneto-Optical Light Modulation Device
Co/Pt multilayered films show strong perpendicular magnetic anisotropy and have a large magneto-optical Kerr effect in the short wavelength side. To use these films with submicron spatial light modulators driven by spin transfer switching (STS), we fabricated current perpendicular to plane giant mag...
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Published in: | IEEE transactions on magnetics 2010-06, Vol.46 (6), p.2171-2174 |
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container_title | IEEE transactions on magnetics |
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creator | Machida, Kenji Furukawa, Keiji Funabashi, Nobuhiko Aoshima, Ken-Ichi Kuga, Kiyoshi Ishibashi, Takayuki Shimidzu, Naoki |
description | Co/Pt multilayered films show strong perpendicular magnetic anisotropy and have a large magneto-optical Kerr effect in the short wavelength side. To use these films with submicron spatial light modulators driven by spin transfer switching (STS), we fabricated current perpendicular to plane giant magnetoresistance (CPP-GMR) and tunnel magnetoresistance (TMR) devices with Co/Pt multilayers for free layers and investigated the MR properties, the STS characteristics, and the Kerr effects. A Kerr hysteresis loop was clearly observed in the CPP-GMR device, which was 125 × 180 nm 2 . Full magnetization reversal of the Co/Pt multilayered film by spin transfer torque was demonstrated for a CPP-GMR device with a Cu-based top electrode. On the other hand, there was hardly any resistance change in a CPP-GMR with a transparent top electrode due to the low MR ratio of the device. A TMR stack with a Ag buffer layer showed a strong perpendicular magnetic anisotropy. An MR curve was detected for a TMR device with a transparent top electrode. |
doi_str_mv | 10.1109/TMAG.2010.2042931 |
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To use these films with submicron spatial light modulators driven by spin transfer switching (STS), we fabricated current perpendicular to plane giant magnetoresistance (CPP-GMR) and tunnel magnetoresistance (TMR) devices with Co/Pt multilayers for free layers and investigated the MR properties, the STS characteristics, and the Kerr effects. A Kerr hysteresis loop was clearly observed in the CPP-GMR device, which was 125 × 180 nm 2 . Full magnetization reversal of the Co/Pt multilayered film by spin transfer torque was demonstrated for a CPP-GMR device with a Cu-based top electrode. On the other hand, there was hardly any resistance change in a CPP-GMR with a transparent top electrode due to the low MR ratio of the device. A TMR stack with a Ag buffer layer showed a strong perpendicular magnetic anisotropy. An MR curve was detected for a TMR device with a transparent top electrode.</description><identifier>ISSN: 0018-9464</identifier><identifier>EISSN: 1941-0069</identifier><identifier>DOI: 10.1109/TMAG.2010.2042931</identifier><identifier>CODEN: IEMGAQ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Cross-disciplinary physics: materials science; rheology ; Current perpendicular to plane giant magnetoresistance (CPP-GMR) ; Devices ; Electrodes ; Exact sciences and technology ; Kerr effects ; Magnetic anisotropy ; Magnetic films ; Magnetic modulators ; Magnetic properties ; Magnetic switching ; Magnetism ; Magnetization reversal ; Magnetooptic devices ; Magnetooptic effects ; Materials science ; Optical modulation ; Other topics in materials science ; Perpendicular magnetic anisotropy ; Physics ; Platinum ; Silver ; spin transfer torque ; Switching ; Tunnel magnetoresistance ; tunnel magnetoresistance (TMR) ; Tunneling magnetoresistance</subject><ispartof>IEEE transactions on magnetics, 2010-06, Vol.46 (6), p.2171-2174</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Jun 2010</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c421t-e6409bc59a3b24460042035e72b3d4b414662d2801319468ffcb2bf2b23cfd6f3</citedby><cites>FETCH-LOGICAL-c421t-e6409bc59a3b24460042035e72b3d4b414662d2801319468ffcb2bf2b23cfd6f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5467557$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,23930,23931,25140,27924,27925,54796</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23118876$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Machida, Kenji</creatorcontrib><creatorcontrib>Furukawa, Keiji</creatorcontrib><creatorcontrib>Funabashi, Nobuhiko</creatorcontrib><creatorcontrib>Aoshima, Ken-Ichi</creatorcontrib><creatorcontrib>Kuga, Kiyoshi</creatorcontrib><creatorcontrib>Ishibashi, Takayuki</creatorcontrib><creatorcontrib>Shimidzu, Naoki</creatorcontrib><title>Spin Transfer Switching and MR Properties of Co/Pt Multilayered Free Layers for Submicron Sized Magneto-Optical Light Modulation Device</title><title>IEEE transactions on magnetics</title><addtitle>TMAG</addtitle><description>Co/Pt multilayered films show strong perpendicular magnetic anisotropy and have a large magneto-optical Kerr effect in the short wavelength side. To use these films with submicron spatial light modulators driven by spin transfer switching (STS), we fabricated current perpendicular to plane giant magnetoresistance (CPP-GMR) and tunnel magnetoresistance (TMR) devices with Co/Pt multilayers for free layers and investigated the MR properties, the STS characteristics, and the Kerr effects. A Kerr hysteresis loop was clearly observed in the CPP-GMR device, which was 125 × 180 nm 2 . Full magnetization reversal of the Co/Pt multilayered film by spin transfer torque was demonstrated for a CPP-GMR device with a Cu-based top electrode. On the other hand, there was hardly any resistance change in a CPP-GMR with a transparent top electrode due to the low MR ratio of the device. A TMR stack with a Ag buffer layer showed a strong perpendicular magnetic anisotropy. An MR curve was detected for a TMR device with a transparent top electrode.</description><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Current perpendicular to plane giant magnetoresistance (CPP-GMR)</subject><subject>Devices</subject><subject>Electrodes</subject><subject>Exact sciences and technology</subject><subject>Kerr effects</subject><subject>Magnetic anisotropy</subject><subject>Magnetic films</subject><subject>Magnetic modulators</subject><subject>Magnetic properties</subject><subject>Magnetic switching</subject><subject>Magnetism</subject><subject>Magnetization reversal</subject><subject>Magnetooptic devices</subject><subject>Magnetooptic effects</subject><subject>Materials science</subject><subject>Optical modulation</subject><subject>Other topics in materials science</subject><subject>Perpendicular magnetic anisotropy</subject><subject>Physics</subject><subject>Platinum</subject><subject>Silver</subject><subject>spin transfer torque</subject><subject>Switching</subject><subject>Tunnel magnetoresistance</subject><subject>tunnel magnetoresistance (TMR)</subject><subject>Tunneling magnetoresistance</subject><issn>0018-9464</issn><issn>1941-0069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNpdkc9u1DAQxi0EEkvhARAXSwhxSut_ceJjtaUFaVet2OUcOc546yobBzsBtS_Q12ZWu-qBk_VpfvN5Zj5CPnJ2zjkzF9v15c25YCgFU8JI_oosuFG8YEyb12TBGK8Lo7R6S97l_IBSlZwtyPNmDAPdJjtkD4lu_obJ3YdhR-3Q0fVPepfiCGkKkGn0dBkv7ia6nvsp9PYREnT0OgHQ1UFk6iM6zO0-uBQHuglPWF_b3QBTLG7HKTjb01XY3aNF7ObeTgGxK_gTHLwnb7ztM3w4vWfk1_W37fJ7sbq9-bG8XBVOCT4VoBUzrSuNla1QSjNclskSKtHKTrWKK61FJ2rGJW6va-9dK1ovWiGd77SXZ-Tr0XdM8fcMeWr2ITvoeztAnHNTl6U2UhiD5Of_yIc4pwGHazgTFTccv0GKHylcOecEvhlT2Nv0iFBzSKY5JNMckmlOyWDPl5OzzXgSj8d3Ib80Csl5XVcauU9HLgDAS7lUuirLSv4DMj-WXg</recordid><startdate>20100601</startdate><enddate>20100601</enddate><creator>Machida, Kenji</creator><creator>Furukawa, Keiji</creator><creator>Funabashi, Nobuhiko</creator><creator>Aoshima, Ken-Ichi</creator><creator>Kuga, Kiyoshi</creator><creator>Ishibashi, Takayuki</creator><creator>Shimidzu, Naoki</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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To use these films with submicron spatial light modulators driven by spin transfer switching (STS), we fabricated current perpendicular to plane giant magnetoresistance (CPP-GMR) and tunnel magnetoresistance (TMR) devices with Co/Pt multilayers for free layers and investigated the MR properties, the STS characteristics, and the Kerr effects. A Kerr hysteresis loop was clearly observed in the CPP-GMR device, which was 125 × 180 nm 2 . Full magnetization reversal of the Co/Pt multilayered film by spin transfer torque was demonstrated for a CPP-GMR device with a Cu-based top electrode. On the other hand, there was hardly any resistance change in a CPP-GMR with a transparent top electrode due to the low MR ratio of the device. A TMR stack with a Ag buffer layer showed a strong perpendicular magnetic anisotropy. 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subjects | Cross-disciplinary physics: materials science rheology Current perpendicular to plane giant magnetoresistance (CPP-GMR) Devices Electrodes Exact sciences and technology Kerr effects Magnetic anisotropy Magnetic films Magnetic modulators Magnetic properties Magnetic switching Magnetism Magnetization reversal Magnetooptic devices Magnetooptic effects Materials science Optical modulation Other topics in materials science Perpendicular magnetic anisotropy Physics Platinum Silver spin transfer torque Switching Tunnel magnetoresistance tunnel magnetoresistance (TMR) Tunneling magnetoresistance |
title | Spin Transfer Switching and MR Properties of Co/Pt Multilayered Free Layers for Submicron Sized Magneto-Optical Light Modulation Device |
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