Integration of BiSb topological insulator and CoFeB/MgO with perpendicular magnetic anisotropy using an oxide interfacial layer for ultralow power SOT-MRAM cache memory

BiSb topological insulator is attractive for the spin current source in spin-orbit torque (SOT) magnetoresistive random access memory (MRAM) thanks to its giant charge-to-spin conversion efficiency. However, the large spin Hall angles have been reported so far only in BiSb deposited on top of Co/Pt...

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Bibliographic Details
Published in:IEEE transactions on magnetics 2023-11, Vol.59 (11), p.1-1
Main Authors: Huy, Ho Hoang, Ruixian, Zhang, Shirokura, Takanori, Takahashi, Shigeki, Hirayama, Yoshiyuki, Hai, Pham Nam
Format: Article
Language:English
Subjects:
BiSb
Charge efficiency
Current sources
Electrical resistance measurement
Heavy metals
Junctions
Magnesium oxide
Magnetic anisotropy
Magnetic field measurement
Magnetic fields
Magnetic tunneling
Magnetism
Magnetoresistivity
Multilayers
Perpendicular magnetic anisotropy
Pulse duration
Random access memory
Resistance
spin Hall effect
spin-orbit torque
Spintronics
topological insulator
Topological insulators
Tunnel junctions
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Summary:BiSb topological insulator is attractive for the spin current source in spin-orbit torque (SOT) magnetoresistive random access memory (MRAM) thanks to its giant charge-to-spin conversion efficiency. However, the large spin Hall angles have been reported so far only in BiSb deposited on top of Co/Pt and Co/Tb multilayers. In realistic SOT-MRAM application, it is essential to integrate BiSb to CoFeB/MgO junction with perpendicular magnetic anisotropy (PMA). Here, we report a large spin Hall angle of 2.8 in junctions of bottom BiSb and CoFeB/MgO with perpendicular magnetic anisotropy using a CrOx interfacial layer, which is suitable for use in magnetic tunnel junctions (MTJ). We demonstrated SOT magnetization switching by a small current density of 3.1 MA/cm 2 at a pulse width of 50 μs, which is an order of magnitude smaller than that in heavy metals. Our work demonstrates the capability of integrating BiSb to CoFeB/MgO-based MTJ.
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2023.3275171