A High Speed and High Yield Path Switching Sensing Circuit for STT-MRAM

Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is a promising storage technology owing to its low power consumption, great scalability and high endurance. However, with the downscaling of technology node, the process variation of the device increases fast, leading to increased read fa...

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Bibliographic Details
Published in:IEEE transactions on magnetics 2024-11, p.1-1
Main Authors: Wang, You, Song, Da, Xu, Yefan, Gong, Yu, Deng, Erya, Liu, Weiqiang
Format: Article
Language:English
Subjects:
Clamps
Discharges (electric)
Latches
Logic gates
Magnetization
read disturbance
read yield
Resistance
Resistors
sensing circuit
Sensing margin
Sensors
STT-MRAM
Switches
Voltage
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Summary:Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is a promising storage technology owing to its low power consumption, great scalability and high endurance. However, with the downscaling of technology node, the process variation of the device increases fast, leading to increased read failures and read disturbance in STT-MRAM. Moreover, as STT-MRAM is usually considered as an energy-efficient device for low power designs, the overscaling of supply voltage further degrades the read yield and read latency. In this paper, a novel sensing circuit is proposed to improve read yield and read speed by utilizing path-switching approach. The simulation results demonstrate a sensing latency of 400 ps at a supply voltage of 1 V, with a read yield of 99.9%. Moreover, the proposed circuit exhibits no degradation in read yield at 100 °C or with the supply voltage as low as 0.6 V, demonstrating high reliability.
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2024.3491573