Theory of Infrared and Optical Frequency Amplification in Metal-Barrier-Metal Diodes

The near-infrared and optical frequency power gain of a metal-barrier-metal (MBM) point contact diode exhibiting a negative differential resistance region in its current-voltage characteristic is derived as a function of frequency. The diode is treated as a traveling-wave amplifier. The starting poi...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 1979-06, Vol.27 (6), p.598-603
Main Authors: Drury, D.M., Ishii, T.K.
Format: Article
Language:English
Subjects:
Contact resistance
Diodes
Electric resistance
Frequency
Laser theory
Magnetic fields
Magnetic tunneling
Optical amplifiers
Optical surface waves
Stimulated emission
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Summary:The near-infrared and optical frequency power gain of a metal-barrier-metal (MBM) point contact diode exhibiting a negative differential resistance region in its current-voltage characteristic is derived as a function of frequency. The diode is treated as a traveling-wave amplifier. The starting point for the analysis is the known electric and magnetic field distribution of the surface waves that propagate in the oxide barrier layer between the diode whisker and substrate, assuming no tunneling current is present. Then the differential tunneling conductance is introduced, and the electric and magnetic field distribution is used to find the propagation constant of the equivalent transmission line formed by the diode structure. It is shown that if the differential tunneling conductance is negative, gain can result. It is shown theoretically that the diode amplifier can provide approximately a 6-dB gain from the CO/sub 2/ laser frequency to the He-Ne laser frequency.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.1979.1129678