Proton Isolation for GaAs Integrated Circuits

Significant improvement in the electrical isolation of closely spaced GaAs integrated circuit (IC) devices has been achieved with proton implantation. Isolation voltages have been increased by a factor of four in comparison to a selective implant process. In addition, the tendency of negatively base...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 1982-07, Vol.30 (7), p.955-963
Main Author: D'Avanzo, D.C.
Format: Article
Language:English
Subjects:
Dielectrics
Gallium arsenide
Gold
Implants
Life testing
MESFETs
Ohmic contacts
Protons
Temperature
Voltage
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Summary:Significant improvement in the electrical isolation of closely spaced GaAs integrated circuit (IC) devices has been achieved with proton implantation. Isolation voltages have been increased by a factor of four in comparison to a selective implant process. In addition, the tendency of negatively based ohmic contacts to reduce the current flow in neighboring MESFET's (backgating) has been reduced by at least a factor of three. The GaAs IC compatible process includes implantation of protons through the SiO/sub 2/ field oxide layer and a three-layered dielectric- Au mask which is definable to 3-µm linewidths and is easily removed. High temperature storage tests have demonstrated that proton isolation, with lifetimes on the order of 10/sup 5/ h at 290° C, is not a lifetime limiting component in a GaAs IC process.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.1982.1131183