A Very Wide-Band Microwave MESFET Mixer Using the Distributed Mixing Principle

A new theory of distributed (traveling-wave) mixing is presented. A closed-form expression for the conversion gain is derived. Subsequently, the expression is reduced to a very simple form when the mixer approaches the ideal lossless case. A simplified nonlinear model of a GaAs MESFET is also descri...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 1985-12, Vol.33 (12), p.1470-1478
Main Authors: On San A. Tang, Aitchison, C.S.
Format: Article
Language:English
Subjects:
Capacitance
Closed-form solution
Diodes
Gallium arsenide
MESFET circuits
Mixers
Storage area networks
Transmission line theory
Wideband
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Summary:A new theory of distributed (traveling-wave) mixing is presented. A closed-form expression for the conversion gain is derived. Subsequently, the expression is reduced to a very simple form when the mixer approaches the ideal lossless case. A simplified nonlinear model of a GaAs MESFET is also described. Design criteria and considerations are presented. The relative contributions made by circuit parasitic to the conversion gain-bandwidth product are also examined. Experimental verification on a two-section design is described. It exhibits around 4 dB of conversion loss over the signal frequency band from 2 GHz to the cutoff at 10 GHz for an IF of 1.5 GHz. Experimental results obtained corroborate the theoretical predictions. Better performance is expected if more sections are employed.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.1985.1133242