A 2 Gb/s Throughput GaAs Digital Time Switch LSI Using LSCFL

A GaAs four-channel digital time switch LSI with a 2.0-Gb/s throughput is developed. This switch consists of 4-bit shift registers, data latches, a counter, a control unit, and 1/0 buffer gates. The LSI includes 1176 devices (FET's, diodes, and resistors) and its equivalent gate number is 231 g...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 1985-12, Vol.33 (12), p.1579-1584
Main Authors: Takada, T., Shimazu, Y., Yamasaki, K., Togashi, M., Hoshikawa, K., Idda, M.
Format: Article
Language:English
Subjects:
Counting circuits
Diodes
FETs
Frequency conversion
Gallium arsenide
Large scale integration
Latches
Shift registers
Switches
Throughput
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Summary:A GaAs four-channel digital time switch LSI with a 2.0-Gb/s throughput is developed. This switch consists of 4-bit shift registers, data latches, a counter, a control unit, and 1/0 buffer gates. The LSI includes 1176 devices (FET's, diodes, and resistors) and its equivalent gate number is 231 gates. Low Power Source Coupled FET Logic (LSCFL) operating in a true/complementary mode is used to ensure high-speed and low-power performance. MESFET's with 0.55-µm gate length are fabricated by the buried p-layer SAINT process, which satisfactorily suppresses short channel effects. Dislocation-free wafers are also used to provide high chip yields of 75 percent. The propagation delay time of the LSCFL basic circuit is 48 ps/gate with 1.4-mW/equivalent gate. The total power dissipation including input and output buffers is 0.64 W. The LSI speed performance is evaluated by measuring toggle frequency of the 1/4 frequency divider. The divider operates typically at 5.1 GHz, maximum 7.5 GHz. The newly developed high-speed digital time switch LSI makes possible time division switching services in TV and high-definition TV transmission systems.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.1985.1133260