Surface-Mounted GaAs Active Splitter and Attenuator MMIC's Used in a 1-10-GHz Leveling Loop

A wide-band monolithic GaAs bridge-T variable attenuator has been used with a monolithic GaAs active power splitter to form a compact 1-10-GHz leveling loop having a minimum 9-dB leveling range with buffered output. The attenuator internally optimizes input and output return loss over a 1- 10-GHz ba...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 1986-12, Vol.34 (12), p.1569-1575
Main Authors: Barta, G.S., Jones, K.E., Herrick, G.C., Strid, E.W.
Format: Article
Language:English
Subjects:
Applied sciences
Assembly
Attenuation
Attenuators
Bandwidth
Circuit properties
Circuits
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Gallium arsenide
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Microwave theory and techniques
MMICs
Packaging
Wideband
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Summary:A wide-band monolithic GaAs bridge-T variable attenuator has been used with a monolithic GaAs active power splitter to form a compact 1-10-GHz leveling loop having a minimum 9-dB leveling range with buffered output. The attenuator internally optimizes input and output return loss over a 1- 10-GHz bandwidth by the use of an on-chip GaAs op-amp. The active power splitter provides unity gain to each port over a 1-10-GHz bandwidth by the use of distributed amplification. The entire 4.5-cm by 4.2-cm subsystem was realized with surface mount packages on RT-Duroid®, demonstrating new construction techniques for GaAs MMIC assembly.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.1986.1133580