RF operation of MOSFETs under integrated inductors

This paper presents an in-depth analysis of the operation of a CMOS single-chip three-dimensional inductor over a MOSFET structure at RF frequencies. Active circuitry is placed underneath the integrated inductors in order to take advantage of the vacant space. Measurements indicate that the operatio...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2006-05, Vol.54 (5), p.2106-2117
Main Authors: Nastos, N., Papananos, Y.
Format: Article
Language:English
Subjects:
Active inductors
Applied sciences
Circuit topology
CMOS
CMOS process
Design engineering
Design. Technologies. Operation analysis. Testing
Electromagnetic (EM) interference
Electromagnetic compatibility
Electronics
Exact sciences and technology
Inductors
Information, signal and communications theory
Integrated circuit modeling
Integrated circuits
integrated inductors
Interference
Magnetic devices
Microwaves
MOSFET-inductor interference
MOSFETs
Origins
Placement
Q factor
Radio frequencies
Radio frequency
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Spirals
Telecommunications and information theory
three-dimensional (3-D) analog integrated circuits (ICs)
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Summary:This paper presents an in-depth analysis of the operation of a CMOS single-chip three-dimensional inductor over a MOSFET structure at RF frequencies. Active circuitry is placed underneath the integrated inductors in order to take advantage of the vacant space. Measurements indicate that the operation of the MOSFET and of the inductor is affected in a predictable manner. The paper theoretically investigates the interaction between the two elements,analyzes the origin of all appearing effects and compares the theory with the experimental data from a typical CMOS process. Moreover, this study proposes possible applications and design guides and confirms the attractiveness of the inductor over MOSFET placement.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2006.872791