Loading…
A Scalable RFCMOS Noise Model
This paper presents the high-frequency (HF) noise modeling of an RF MOSFET for a 90-nm technology node. A brief discussion on the noise measurement theory is presented to illustrate the limitation of the noise measurement system. The extracted noise sources were studied for their geometry and biasin...
Saved in:
Published in: | IEEE transactions on microwave theory and techniques 2009-05, Vol.57 (5), p.1009-1019 |
---|---|
Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
cited_by | cdi_FETCH-LOGICAL-c428t-2927459f04b74890dcd72aec655469a45b0d3c84ff51c51163b4ac23f7f0e7fe3 |
---|---|
cites | cdi_FETCH-LOGICAL-c428t-2927459f04b74890dcd72aec655469a45b0d3c84ff51c51163b4ac23f7f0e7fe3 |
container_end_page | 1019 |
container_issue | 5 |
container_start_page | 1009 |
container_title | IEEE transactions on microwave theory and techniques |
container_volume | 57 |
creator | Tong, A.F. Wei Meng Lim Yeo, K.S. Choon Beng Sia Wen Cong Zhou |
description | This paper presents the high-frequency (HF) noise modeling of an RF MOSFET for a 90-nm technology node. A brief discussion on the noise measurement theory is presented to illustrate the limitation of the noise measurement system. The extracted noise sources were studied for their geometry and biasing dependences and by implementing additional noise sources into the small-signal RFCMOS model, accurate HF noise simulation for the transistor can be achieved. Verilog-A is used for the coding of the additional noise sources into the RFCMOS model and the added noise source will compensate the underestimation of the channel thermal noise from the BSIM3v3 core model. Simulated noise circles and the measured noise figures are plotted at other source impedances to show that all the noise parameters are simulated accurately. The biasing and geometry dependences of the measured and simulated noise parameters are presented to demonstrate the scalability of the developed HF noise model. The scalability feature in HF noise model can be implemented into the process design kit (PDK) so that more powerful PDK can be developed for the circuit designers to optimize and simulate their circuit design that requires stringent noise specifications. The accurate noise simulation can ensure better chance of success and reduce the number of tape-out and design cycle time. |
doi_str_mv | 10.1109/TMTT.2009.2017245 |
format | article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1109_TMTT_2009_2017245</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4814523</ieee_id><sourcerecordid>2291917021</sourcerecordid><originalsourceid>FETCH-LOGICAL-c428t-2927459f04b74890dcd72aec655469a45b0d3c84ff51c51163b4ac23f7f0e7fe3</originalsourceid><addsrcrecordid>eNp9kEtLAzEQgIMoWKs_QERYBPW0Na_J41iKVaG1YNdzyGYT2LLt6qY9-O_N0tKDBy8zDPPNMPMhdE3wiBCsn4p5UYwoxjoFIimHEzQgADLXQuJTNMCYqFxzhc_RRYyrVHLAaoBux9nS2caWjc8-ppP5Ypm9t3X02bytfHOJzoJtor865CH6nD4Xk9d8tnh5m4xnueNUbXOqqeSgA-al5ErjylWSWu8EABfacihxxZziIQBxQIhgJbeOsiAD9jJ4NkSP-71fXfu983Fr1nV0vmnsxre7aJTQCgCYSuTDvyTjwBhVOoF3f8BVu-s26QujQGjCGPAEkT3kujbGzgfz1dVr2_0Ygk3v1fReTe_VHLymmfvDYhuTudDZjavjcZASLvpDE3ez52rv_bHNVRJPGfsFsv58Yg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>856913354</pqid></control><display><type>article</type><title>A Scalable RFCMOS Noise Model</title><source>IEEE Xplore (Online service)</source><creator>Tong, A.F. ; Wei Meng Lim ; Yeo, K.S. ; Choon Beng Sia ; Wen Cong Zhou</creator><creatorcontrib>Tong, A.F. ; Wei Meng Lim ; Yeo, K.S. ; Choon Beng Sia ; Wen Cong Zhou</creatorcontrib><description>This paper presents the high-frequency (HF) noise modeling of an RF MOSFET for a 90-nm technology node. A brief discussion on the noise measurement theory is presented to illustrate the limitation of the noise measurement system. The extracted noise sources were studied for their geometry and biasing dependences and by implementing additional noise sources into the small-signal RFCMOS model, accurate HF noise simulation for the transistor can be achieved. Verilog-A is used for the coding of the additional noise sources into the RFCMOS model and the added noise source will compensate the underestimation of the channel thermal noise from the BSIM3v3 core model. Simulated noise circles and the measured noise figures are plotted at other source impedances to show that all the noise parameters are simulated accurately. The biasing and geometry dependences of the measured and simulated noise parameters are presented to demonstrate the scalability of the developed HF noise model. The scalability feature in HF noise model can be implemented into the process design kit (PDK) so that more powerful PDK can be developed for the circuit designers to optimize and simulate their circuit design that requires stringent noise specifications. The accurate noise simulation can ensure better chance of success and reduce the number of tape-out and design cycle time.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2009.2017245</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; BSIM3v3 ; Circuit design ; Circuit noise ; Circuit simulation ; Computer simulation ; Cycle time ; Design ; Design engineering ; Design. Technologies. Operation analysis. Testing ; Electronics ; Exact sciences and technology ; Geometry ; Hafnium ; HF noise modeling ; high-frequency (HF) noise model ; Integrated circuits ; Mathematical models ; Microwaves ; MOSFET circuits ; Noise ; Noise figure ; Noise measurement ; Radio frequency ; RF MOSFET ; RFCMOS ; Scalability ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Solid modeling ; Studies ; Verilog-A</subject><ispartof>IEEE transactions on microwave theory and techniques, 2009-05, Vol.57 (5), p.1009-1019</ispartof><rights>2009 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2009</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c428t-2927459f04b74890dcd72aec655469a45b0d3c84ff51c51163b4ac23f7f0e7fe3</citedby><cites>FETCH-LOGICAL-c428t-2927459f04b74890dcd72aec655469a45b0d3c84ff51c51163b4ac23f7f0e7fe3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4814523$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,27903,27904,54775</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21465383$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Tong, A.F.</creatorcontrib><creatorcontrib>Wei Meng Lim</creatorcontrib><creatorcontrib>Yeo, K.S.</creatorcontrib><creatorcontrib>Choon Beng Sia</creatorcontrib><creatorcontrib>Wen Cong Zhou</creatorcontrib><title>A Scalable RFCMOS Noise Model</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>This paper presents the high-frequency (HF) noise modeling of an RF MOSFET for a 90-nm technology node. A brief discussion on the noise measurement theory is presented to illustrate the limitation of the noise measurement system. The extracted noise sources were studied for their geometry and biasing dependences and by implementing additional noise sources into the small-signal RFCMOS model, accurate HF noise simulation for the transistor can be achieved. Verilog-A is used for the coding of the additional noise sources into the RFCMOS model and the added noise source will compensate the underestimation of the channel thermal noise from the BSIM3v3 core model. Simulated noise circles and the measured noise figures are plotted at other source impedances to show that all the noise parameters are simulated accurately. The biasing and geometry dependences of the measured and simulated noise parameters are presented to demonstrate the scalability of the developed HF noise model. The scalability feature in HF noise model can be implemented into the process design kit (PDK) so that more powerful PDK can be developed for the circuit designers to optimize and simulate their circuit design that requires stringent noise specifications. The accurate noise simulation can ensure better chance of success and reduce the number of tape-out and design cycle time.</description><subject>Applied sciences</subject><subject>BSIM3v3</subject><subject>Circuit design</subject><subject>Circuit noise</subject><subject>Circuit simulation</subject><subject>Computer simulation</subject><subject>Cycle time</subject><subject>Design</subject><subject>Design engineering</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Geometry</subject><subject>Hafnium</subject><subject>HF noise modeling</subject><subject>high-frequency (HF) noise model</subject><subject>Integrated circuits</subject><subject>Mathematical models</subject><subject>Microwaves</subject><subject>MOSFET circuits</subject><subject>Noise</subject><subject>Noise figure</subject><subject>Noise measurement</subject><subject>Radio frequency</subject><subject>RF MOSFET</subject><subject>RFCMOS</subject><subject>Scalability</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Solid modeling</subject><subject>Studies</subject><subject>Verilog-A</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNp9kEtLAzEQgIMoWKs_QERYBPW0Na_J41iKVaG1YNdzyGYT2LLt6qY9-O_N0tKDBy8zDPPNMPMhdE3wiBCsn4p5UYwoxjoFIimHEzQgADLXQuJTNMCYqFxzhc_RRYyrVHLAaoBux9nS2caWjc8-ppP5Ypm9t3X02bytfHOJzoJtor865CH6nD4Xk9d8tnh5m4xnueNUbXOqqeSgA-al5ErjylWSWu8EABfacihxxZziIQBxQIhgJbeOsiAD9jJ4NkSP-71fXfu983Fr1nV0vmnsxre7aJTQCgCYSuTDvyTjwBhVOoF3f8BVu-s26QujQGjCGPAEkT3kujbGzgfz1dVr2_0Ygk3v1fReTe_VHLymmfvDYhuTudDZjavjcZASLvpDE3ez52rv_bHNVRJPGfsFsv58Yg</recordid><startdate>20090501</startdate><enddate>20090501</enddate><creator>Tong, A.F.</creator><creator>Wei Meng Lim</creator><creator>Yeo, K.S.</creator><creator>Choon Beng Sia</creator><creator>Wen Cong Zhou</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20090501</creationdate><title>A Scalable RFCMOS Noise Model</title><author>Tong, A.F. ; Wei Meng Lim ; Yeo, K.S. ; Choon Beng Sia ; Wen Cong Zhou</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c428t-2927459f04b74890dcd72aec655469a45b0d3c84ff51c51163b4ac23f7f0e7fe3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>Applied sciences</topic><topic>BSIM3v3</topic><topic>Circuit design</topic><topic>Circuit noise</topic><topic>Circuit simulation</topic><topic>Computer simulation</topic><topic>Cycle time</topic><topic>Design</topic><topic>Design engineering</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Geometry</topic><topic>Hafnium</topic><topic>HF noise modeling</topic><topic>high-frequency (HF) noise model</topic><topic>Integrated circuits</topic><topic>Mathematical models</topic><topic>Microwaves</topic><topic>MOSFET circuits</topic><topic>Noise</topic><topic>Noise figure</topic><topic>Noise measurement</topic><topic>Radio frequency</topic><topic>RF MOSFET</topic><topic>RFCMOS</topic><topic>Scalability</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Solid modeling</topic><topic>Studies</topic><topic>Verilog-A</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tong, A.F.</creatorcontrib><creatorcontrib>Wei Meng Lim</creatorcontrib><creatorcontrib>Yeo, K.S.</creatorcontrib><creatorcontrib>Choon Beng Sia</creatorcontrib><creatorcontrib>Wen Cong Zhou</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tong, A.F.</au><au>Wei Meng Lim</au><au>Yeo, K.S.</au><au>Choon Beng Sia</au><au>Wen Cong Zhou</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Scalable RFCMOS Noise Model</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>2009-05-01</date><risdate>2009</risdate><volume>57</volume><issue>5</issue><spage>1009</spage><epage>1019</epage><pages>1009-1019</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>This paper presents the high-frequency (HF) noise modeling of an RF MOSFET for a 90-nm technology node. A brief discussion on the noise measurement theory is presented to illustrate the limitation of the noise measurement system. The extracted noise sources were studied for their geometry and biasing dependences and by implementing additional noise sources into the small-signal RFCMOS model, accurate HF noise simulation for the transistor can be achieved. Verilog-A is used for the coding of the additional noise sources into the RFCMOS model and the added noise source will compensate the underestimation of the channel thermal noise from the BSIM3v3 core model. Simulated noise circles and the measured noise figures are plotted at other source impedances to show that all the noise parameters are simulated accurately. The biasing and geometry dependences of the measured and simulated noise parameters are presented to demonstrate the scalability of the developed HF noise model. The scalability feature in HF noise model can be implemented into the process design kit (PDK) so that more powerful PDK can be developed for the circuit designers to optimize and simulate their circuit design that requires stringent noise specifications. The accurate noise simulation can ensure better chance of success and reduce the number of tape-out and design cycle time.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMTT.2009.2017245</doi><tpages>11</tpages><oa>free_for_read</oa></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0018-9480 |
ispartof | IEEE transactions on microwave theory and techniques, 2009-05, Vol.57 (5), p.1009-1019 |
issn | 0018-9480 1557-9670 |
language | eng |
recordid | cdi_crossref_primary_10_1109_TMTT_2009_2017245 |
source | IEEE Xplore (Online service) |
subjects | Applied sciences BSIM3v3 Circuit design Circuit noise Circuit simulation Computer simulation Cycle time Design Design engineering Design. Technologies. Operation analysis. Testing Electronics Exact sciences and technology Geometry Hafnium HF noise modeling high-frequency (HF) noise model Integrated circuits Mathematical models Microwaves MOSFET circuits Noise Noise figure Noise measurement Radio frequency RF MOSFET RFCMOS Scalability Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solid modeling Studies Verilog-A |
title | A Scalable RFCMOS Noise Model |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-23T02%3A38%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20Scalable%20RFCMOS%20Noise%20Model&rft.jtitle=IEEE%20transactions%20on%20microwave%20theory%20and%20techniques&rft.au=Tong,%20A.F.&rft.date=2009-05-01&rft.volume=57&rft.issue=5&rft.spage=1009&rft.epage=1019&rft.pages=1009-1019&rft.issn=0018-9480&rft.eissn=1557-9670&rft.coden=IETMAB&rft_id=info:doi/10.1109/TMTT.2009.2017245&rft_dat=%3Cproquest_cross%3E2291917021%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c428t-2927459f04b74890dcd72aec655469a45b0d3c84ff51c51163b4ac23f7f0e7fe3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=856913354&rft_id=info:pmid/&rft_ieee_id=4814523&rfr_iscdi=true |