A WLAN RF CMOS PA With Large-Signal MGTR Method

A CMOS linear power amplifier for wireless local area network IEEE 802.11b/g application is presented. To achieve high linear output power and high efficiency, a large-signal multigated transistor linearization method is proposed with an envelope injection gate bias circuit. A novel inter-stage matc...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2013-03, Vol.61 (3), p.1272-1279
Main Authors: JOO, Taehwan, KOO, Bonhoon, HONG, Songcheol
Format: Article
Language:English
Subjects:
AM-to-AM
AM-to-PM
Amplifiers
Applied sciences
Capacitance
Circuit properties
CMOS
CMOS integrated circuits
Design. Technologies. Operation analysis. Testing
Electric, optical and optoelectronic circuits
Electronic circuits
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
envelope injection gate bias circuit
error vector magnitude (EVM)
Exact sciences and technology
fully on-chip
Gates (circuits)
Integrated circuits
large-signal (LS) multigated transistor (MGTR)
Linearity
linearization
Local area networks
Logic gates
Matching
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
power amplifier (PA)
Power generation
Power splitters
Power transistors
Radio frequencies
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
third-order intermodulation distortion (IMD3)
Transformers
Transistors
transmission-line transformer (TLT)
Wireless communication
wireless local area network (WLAN)
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Description
Summary:A CMOS linear power amplifier for wireless local area network IEEE 802.11b/g application is presented. To achieve high linear output power and high efficiency, a large-signal multigated transistor linearization method is proposed with an envelope injection gate bias circuit. A novel inter-stage matching transformer, which functions as a power splitter, is designed to implement this method. It is fabricated with a TSMC 0.13-μm standard RF CMOS process. Measurement shows 19.5-dBm P out with 24.8% power-added efficiency (PAE) at - 25-dB error vector magnitude with an orthogonal frequency-division multiplexing 64-QAM 54-Mb/s 802.11g signal source and 23.15-dBm P out with 31.73% PAE with DSSS, CCK, and 11-Mb/s 802.11b signal source without digital pre-distortion.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2013.2244228