Accurate Small-Signal Equivalent Circuit Modeling of Resonant Tunneling Diodes to 110 GHz

This article presents a novel, on-wafer deembedding technique for the accurate small-signal equivalent circuit modeling of resonant tunneling diodes (RTDs). The approach is applicable to stabilized RTDs, and so enables the modeling of the negative differential resistance (NDR) region of the device&#...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2019-11, Vol.67 (11), p.4332-4340
Main Authors: Morariu, Razvan, Wang, Jue, Cornescu, Andrei Catalin, Al-Khalidi, Abdullah, Ofiare, Afesomeh, Figueiredo, Jose M. L., Wasige, Edward
Format: Article
Language:English
Subjects:
Bias oscillations
Circuits
Diodes
Equivalent circuits
experimental modeling
Integrated circuit modeling
Mathematical models
Modelling
parameter extraction
Parameters
Radio frequency
Resistance
Resistors
Resonant tunneling
Resonant tunneling devices
resonant tunneling diode (RTD)
Scattering parameters
small-signal equivalent circuit
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Summary:This article presents a novel, on-wafer deembedding technique for the accurate small-signal equivalent circuit modeling of resonant tunneling diodes (RTDs). The approach is applicable to stabilized RTDs, and so enables the modeling of the negative differential resistance (NDR) region of the device's current-voltage (I-V) characteristics. Furthermore, a novel quasi-analytical procedure to determine all the equivalent circuit elements from the deembedded S-parameter data is developed. Extraction results of a 10 μm × 10 μm stabilized, low-current density RTD at different bias points show excellent fits between modeled and measured S-parameters up to 110 GHz.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2019.2939321