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Design of E- and W-Band Low-Noise Amplifiers in 22-nm CMOS FD-SOI
This article presents E- and W-band low-noise amplifiers (LNA) in GlobalFoundries 22-nm CMOS fully depleted silicon-on-insulator (FD-SOI). Both amplifiers employ a three-stage cascode design with gain-boosting transformer loads. Design procedures are presented for E- and W-band LNAs for narrowband a...
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Published in: | IEEE transactions on microwave theory and techniques 2020-01, Vol.68 (1), p.132-143 |
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description | This article presents E- and W-band low-noise amplifiers (LNA) in GlobalFoundries 22-nm CMOS fully depleted silicon-on-insulator (FD-SOI). Both amplifiers employ a three-stage cascode design with gain-boosting transformer loads. Design procedures are presented for E- and W-band LNAs for narrowband and wideband applications. The E-band LNA focuses on a high-gain, low-power implementation, and results in a gain and noise figure (NF) of 20 and 4.6 dB at 77 GHz with a 3-dB bandwidth of 12 GHz, and an input P1dB of -27.4 dBm, for a power consumption of 9 mW. The W-band LNA focuses on wideband applications and results in a peak gain of 18.2 dB with a 3-dB bandwidth of 31 GHz, for a power consumption of 16 mW. The LNAs have a high figure-of-merit (FoM) and show very low-power operation in the 70-100 GHz range. Application areas are in phased arrays for 5G with hundreds or thousands of elements, automotive radars at 77 GHz, and sensors at 94 GHz. |
doi_str_mv | 10.1109/TMTT.2019.2944820 |
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Both amplifiers employ a three-stage cascode design with gain-boosting transformer loads. Design procedures are presented for E- and W-band LNAs for narrowband and wideband applications. The E-band LNA focuses on a high-gain, low-power implementation, and results in a gain and noise figure (NF) of 20 and 4.6 dB at 77 GHz with a 3-dB bandwidth of 12 GHz, and an input P1dB of -27.4 dBm, for a power consumption of 9 mW. The W-band LNA focuses on wideband applications and results in a peak gain of 18.2 dB with a 3-dB bandwidth of 31 GHz, for a power consumption of 16 mW. The LNAs have a high figure-of-merit (FoM) and show very low-power operation in the 70-100 GHz range. Application areas are in phased arrays for 5G with hundreds or thousands of elements, automotive radars at 77 GHz, and sensors at 94 GHz.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2019.2944820</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>22-nm CMOS FD-SOI ; Amplification ; Amplifiers ; Automotive radar ; Bandwidths ; Broadband ; Capacitors ; CMOS ; E- and W-bands ; Gain ; Inductors ; low-noise amplifier (LNA) ; Metals ; millimeter-wave integrated circuits ; Narrowband ; Noise ; Noise levels ; Noise measurement ; Phased arrays ; Power consumption ; Power demand ; Silicon ; SOI (semiconductors) ; Transistors</subject><ispartof>IEEE transactions on microwave theory and techniques, 2020-01, Vol.68 (1), p.132-143</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c359t-7d6aac7f517ef9b3d8d12a1b0b9c42e49ebb3bd46e936e17e1559a83d7d1e3ca3</citedby><cites>FETCH-LOGICAL-c359t-7d6aac7f517ef9b3d8d12a1b0b9c42e49ebb3bd46e936e17e1559a83d7d1e3ca3</cites><orcidid>0000-0003-4643-1917</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8874999$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Gao, Li</creatorcontrib><creatorcontrib>Wagner, Eric</creatorcontrib><creatorcontrib>Rebeiz, Gabriel M.</creatorcontrib><title>Design of E- and W-Band Low-Noise Amplifiers in 22-nm CMOS FD-SOI</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>This article presents E- and W-band low-noise amplifiers (LNA) in GlobalFoundries 22-nm CMOS fully depleted silicon-on-insulator (FD-SOI). Both amplifiers employ a three-stage cascode design with gain-boosting transformer loads. Design procedures are presented for E- and W-band LNAs for narrowband and wideband applications. The E-band LNA focuses on a high-gain, low-power implementation, and results in a gain and noise figure (NF) of 20 and 4.6 dB at 77 GHz with a 3-dB bandwidth of 12 GHz, and an input P1dB of -27.4 dBm, for a power consumption of 9 mW. The W-band LNA focuses on wideband applications and results in a peak gain of 18.2 dB with a 3-dB bandwidth of 31 GHz, for a power consumption of 16 mW. The LNAs have a high figure-of-merit (FoM) and show very low-power operation in the 70-100 GHz range. Application areas are in phased arrays for 5G with hundreds or thousands of elements, automotive radars at 77 GHz, and sensors at 94 GHz.</description><subject>22-nm CMOS FD-SOI</subject><subject>Amplification</subject><subject>Amplifiers</subject><subject>Automotive radar</subject><subject>Bandwidths</subject><subject>Broadband</subject><subject>Capacitors</subject><subject>CMOS</subject><subject>E- and W-bands</subject><subject>Gain</subject><subject>Inductors</subject><subject>low-noise amplifier (LNA)</subject><subject>Metals</subject><subject>millimeter-wave integrated circuits</subject><subject>Narrowband</subject><subject>Noise</subject><subject>Noise levels</subject><subject>Noise measurement</subject><subject>Phased arrays</subject><subject>Power consumption</subject><subject>Power demand</subject><subject>Silicon</subject><subject>SOI (semiconductors)</subject><subject>Transistors</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNo9kE1Lw0AQhhdRsFZ_gHhZ8Lx1v5LsHGs_tNDaQyMel00ykS1tUndbxH9vQsXTy8DzzgwPIfeCj4Tg8JSv8nwkuYCRBK2N5BdkIJIkY5Bm_JIMOBeGgTb8mtzEuO1GnXAzIOMpRv_Z0LamM0ZdU9EP9tzHsv1mb62PSMf7w87XHkOkvqFSsmZPJ6v1hs6nbLNe3JKr2u0i3v3lkLzPZ_nklS3XL4vJeMlKlcCRZVXqXJnViciwhkJVphLSiYIXUGqJGrAoVFHpFEGl2EHd9-CMqrJKoCqdGpLH895DaL9OGI92255C0520UqmuJEDpjhJnqgxtjAFrewh-78KPFdz2pmxvyvam7J-prvNw7nhE_OeNyTQAqF8A4WFW</recordid><startdate>202001</startdate><enddate>202001</enddate><creator>Gao, Li</creator><creator>Wagner, Eric</creator><creator>Rebeiz, Gabriel M.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-4643-1917</orcidid></search><sort><creationdate>202001</creationdate><title>Design of E- and W-Band Low-Noise Amplifiers in 22-nm CMOS FD-SOI</title><author>Gao, Li ; Wagner, Eric ; Rebeiz, Gabriel M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c359t-7d6aac7f517ef9b3d8d12a1b0b9c42e49ebb3bd46e936e17e1559a83d7d1e3ca3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>22-nm CMOS FD-SOI</topic><topic>Amplification</topic><topic>Amplifiers</topic><topic>Automotive radar</topic><topic>Bandwidths</topic><topic>Broadband</topic><topic>Capacitors</topic><topic>CMOS</topic><topic>E- and W-bands</topic><topic>Gain</topic><topic>Inductors</topic><topic>low-noise amplifier (LNA)</topic><topic>Metals</topic><topic>millimeter-wave integrated circuits</topic><topic>Narrowband</topic><topic>Noise</topic><topic>Noise levels</topic><topic>Noise measurement</topic><topic>Phased arrays</topic><topic>Power consumption</topic><topic>Power demand</topic><topic>Silicon</topic><topic>SOI (semiconductors)</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gao, Li</creatorcontrib><creatorcontrib>Wagner, Eric</creatorcontrib><creatorcontrib>Rebeiz, Gabriel M.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library Online</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gao, Li</au><au>Wagner, Eric</au><au>Rebeiz, Gabriel M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Design of E- and W-Band Low-Noise Amplifiers in 22-nm CMOS FD-SOI</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>2020-01</date><risdate>2020</risdate><volume>68</volume><issue>1</issue><spage>132</spage><epage>143</epage><pages>132-143</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>This article presents E- and W-band low-noise amplifiers (LNA) in GlobalFoundries 22-nm CMOS fully depleted silicon-on-insulator (FD-SOI). Both amplifiers employ a three-stage cascode design with gain-boosting transformer loads. Design procedures are presented for E- and W-band LNAs for narrowband and wideband applications. The E-band LNA focuses on a high-gain, low-power implementation, and results in a gain and noise figure (NF) of 20 and 4.6 dB at 77 GHz with a 3-dB bandwidth of 12 GHz, and an input P1dB of -27.4 dBm, for a power consumption of 9 mW. The W-band LNA focuses on wideband applications and results in a peak gain of 18.2 dB with a 3-dB bandwidth of 31 GHz, for a power consumption of 16 mW. The LNAs have a high figure-of-merit (FoM) and show very low-power operation in the 70-100 GHz range. Application areas are in phased arrays for 5G with hundreds or thousands of elements, automotive radars at 77 GHz, and sensors at 94 GHz.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TMTT.2019.2944820</doi><tpages>12</tpages><orcidid>https://orcid.org/0000-0003-4643-1917</orcidid></addata></record> |
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subjects | 22-nm CMOS FD-SOI Amplification Amplifiers Automotive radar Bandwidths Broadband Capacitors CMOS E- and W-bands Gain Inductors low-noise amplifier (LNA) Metals millimeter-wave integrated circuits Narrowband Noise Noise levels Noise measurement Phased arrays Power consumption Power demand Silicon SOI (semiconductors) Transistors |
title | Design of E- and W-Band Low-Noise Amplifiers in 22-nm CMOS FD-SOI |
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