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A Photogenerated Silicon Plasma Waveguide Switch and Variable Attenuator for Millimeter-Wave Applications
This article reports the design, fabrication, and measurement of a millimeter-wave (mm-wave) solid-state \pi -match waveguide switch using bulk silicon micromachining. A photogenerated plasma within a silicon post is utilized as the switching element within the waveguide channel. Not only does this...
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Published in: | IEEE transactions on microwave theory and techniques 2021-12, Vol.69 (12), p.5393-5403 |
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container_end_page | 5403 |
container_issue | 12 |
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container_title | IEEE transactions on microwave theory and techniques |
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creator | Jones, Thomas R. Fisher, Alden Barlage, Douglas W. Peroulis, Dimitrios |
description | This article reports the design, fabrication, and measurement of a millimeter-wave (mm-wave) solid-state \pi -match waveguide switch using bulk silicon micromachining. A photogenerated plasma within a silicon post is utilized as the switching element within the waveguide channel. Not only does this isolate the switch bias network from the RF signal path but also allows for tuning of the OFF-state isolation with increasing optical power for application as a variable attenuator. A measured OFF-state isolation greater than 25 dB up to 40 GHz is reported, with a measured extracted ON-state insertion loss of 0.52 dB at 35 GHz, and less than 0.88 dB across the entire band from 30 to 40 GHz. The proposed switch illustrates the significant potential for photogenerated silicon plasma switching of high-performance bulk micromachined mm-wave waveguides. |
doi_str_mv | 10.1109/TMTT.2021.3121692 |
format | article |
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A photogenerated plasma within a silicon post is utilized as the switching element within the waveguide channel. Not only does this isolate the switch bias network from the RF signal path but also allows for tuning of the OFF-state isolation with increasing optical power for application as a variable attenuator. A measured OFF-state isolation greater than 25 dB up to 40 GHz is reported, with a measured extracted ON-state insertion loss of 0.52 dB at 35 GHz, and less than 0.88 dB across the entire band from 30 to 40 GHz. The proposed switch illustrates the significant potential for photogenerated silicon plasma switching of high-performance bulk micromachined mm-wave waveguides.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2021.3121692</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Attenuators ; Conductivity ; Deep reactive ion etching (DRIE) ; Insertion loss ; Micromachining ; millimeter wave ; Millimeter waves ; Optical attenuators ; Optical device fabrication ; Optical switches ; Optical waveguides ; photogenerated solid-state plasma ; Plasmas ; Silicon ; silicon micromachining ; switch ; Switching ; waveguide ; Waveguides</subject><ispartof>IEEE transactions on microwave theory and techniques, 2021-12, Vol.69 (12), p.5393-5403</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2021</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c336t-8364af9256ca4f5d7b81b0ade3a289129a717279fc5c02e34ac76261d75e4e453</citedby><cites>FETCH-LOGICAL-c336t-8364af9256ca4f5d7b81b0ade3a289129a717279fc5c02e34ac76261d75e4e453</cites><orcidid>0000-0002-2868-2512 ; 0000-0003-2541-4667 ; 0000-0002-4993-1653 ; 0000-0003-1734-1277</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9600444$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Jones, Thomas R.</creatorcontrib><creatorcontrib>Fisher, Alden</creatorcontrib><creatorcontrib>Barlage, Douglas W.</creatorcontrib><creatorcontrib>Peroulis, Dimitrios</creatorcontrib><title>A Photogenerated Silicon Plasma Waveguide Switch and Variable Attenuator for Millimeter-Wave Applications</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>This article reports the design, fabrication, and measurement of a millimeter-wave (mm-wave) solid-state <inline-formula> <tex-math notation="LaTeX">\pi </tex-math></inline-formula>-match waveguide switch using bulk silicon micromachining. A photogenerated plasma within a silicon post is utilized as the switching element within the waveguide channel. Not only does this isolate the switch bias network from the RF signal path but also allows for tuning of the OFF-state isolation with increasing optical power for application as a variable attenuator. A measured OFF-state isolation greater than 25 dB up to 40 GHz is reported, with a measured extracted ON-state insertion loss of 0.52 dB at 35 GHz, and less than 0.88 dB across the entire band from 30 to 40 GHz. The proposed switch illustrates the significant potential for photogenerated silicon plasma switching of high-performance bulk micromachined mm-wave waveguides.</description><subject>Attenuators</subject><subject>Conductivity</subject><subject>Deep reactive ion etching (DRIE)</subject><subject>Insertion loss</subject><subject>Micromachining</subject><subject>millimeter wave</subject><subject>Millimeter waves</subject><subject>Optical attenuators</subject><subject>Optical device fabrication</subject><subject>Optical switches</subject><subject>Optical waveguides</subject><subject>photogenerated solid-state plasma</subject><subject>Plasmas</subject><subject>Silicon</subject><subject>silicon micromachining</subject><subject>switch</subject><subject>Switching</subject><subject>waveguide</subject><subject>Waveguides</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNo9kE1Lw0AQhhdRsFZ_gHhZ8Jy6u9mP7DEUv6DFQqMewzSZtFvSpG42iv_elBYPwzDwvO_AQ8gtZxPOmX3I5lk2EUzwScwF11ackRFXykRWG3ZORozxJLIyYZfkquu2wykVS0bEpXSxaUO7xgY9BCzp0tWuaBu6qKHbAf2Eb1z3rkS6_HGh2FBoSvoB3sGqRpqGgE0PofW0Gmbu6trtMKCPDjma7vdDGQTXNt01uaig7vDmtMfk_ekxm75Es7fn12k6i4o41iFKYi2hskLpAmSlSrNK-IpBiTGIxHJhwXAjjK0KVTCBsYTCaKF5aRRKlCoek_tj7963Xz12Id-2vW-Gl7nQTBmWCMkGih-pwrdd57HK997twP_mnOUHo_nBaH4wmp-MDpm7Y8Yh4j9vNWNSyvgPxaFygw</recordid><startdate>20211201</startdate><enddate>20211201</enddate><creator>Jones, Thomas R.</creator><creator>Fisher, Alden</creator><creator>Barlage, Douglas W.</creator><creator>Peroulis, Dimitrios</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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A photogenerated plasma within a silicon post is utilized as the switching element within the waveguide channel. Not only does this isolate the switch bias network from the RF signal path but also allows for tuning of the OFF-state isolation with increasing optical power for application as a variable attenuator. A measured OFF-state isolation greater than 25 dB up to 40 GHz is reported, with a measured extracted ON-state insertion loss of 0.52 dB at 35 GHz, and less than 0.88 dB across the entire band from 30 to 40 GHz. 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source | IEEE Electronic Library (IEL) Journals |
subjects | Attenuators Conductivity Deep reactive ion etching (DRIE) Insertion loss Micromachining millimeter wave Millimeter waves Optical attenuators Optical device fabrication Optical switches Optical waveguides photogenerated solid-state plasma Plasmas Silicon silicon micromachining switch Switching waveguide Waveguides |
title | A Photogenerated Silicon Plasma Waveguide Switch and Variable Attenuator for Millimeter-Wave Applications |
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