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A Photogenerated Silicon Plasma Waveguide Switch and Variable Attenuator for Millimeter-Wave Applications

This article reports the design, fabrication, and measurement of a millimeter-wave (mm-wave) solid-state \pi -match waveguide switch using bulk silicon micromachining. A photogenerated plasma within a silicon post is utilized as the switching element within the waveguide channel. Not only does this...

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Published in:IEEE transactions on microwave theory and techniques 2021-12, Vol.69 (12), p.5393-5403
Main Authors: Jones, Thomas R., Fisher, Alden, Barlage, Douglas W., Peroulis, Dimitrios
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Language:English
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cited_by cdi_FETCH-LOGICAL-c336t-8364af9256ca4f5d7b81b0ade3a289129a717279fc5c02e34ac76261d75e4e453
cites cdi_FETCH-LOGICAL-c336t-8364af9256ca4f5d7b81b0ade3a289129a717279fc5c02e34ac76261d75e4e453
container_end_page 5403
container_issue 12
container_start_page 5393
container_title IEEE transactions on microwave theory and techniques
container_volume 69
creator Jones, Thomas R.
Fisher, Alden
Barlage, Douglas W.
Peroulis, Dimitrios
description This article reports the design, fabrication, and measurement of a millimeter-wave (mm-wave) solid-state \pi -match waveguide switch using bulk silicon micromachining. A photogenerated plasma within a silicon post is utilized as the switching element within the waveguide channel. Not only does this isolate the switch bias network from the RF signal path but also allows for tuning of the OFF-state isolation with increasing optical power for application as a variable attenuator. A measured OFF-state isolation greater than 25 dB up to 40 GHz is reported, with a measured extracted ON-state insertion loss of 0.52 dB at 35 GHz, and less than 0.88 dB across the entire band from 30 to 40 GHz. The proposed switch illustrates the significant potential for photogenerated silicon plasma switching of high-performance bulk micromachined mm-wave waveguides.
doi_str_mv 10.1109/TMTT.2021.3121692
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1109_TMTT_2021_3121692</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9600444</ieee_id><sourcerecordid>2605708240</sourcerecordid><originalsourceid>FETCH-LOGICAL-c336t-8364af9256ca4f5d7b81b0ade3a289129a717279fc5c02e34ac76261d75e4e453</originalsourceid><addsrcrecordid>eNo9kE1Lw0AQhhdRsFZ_gHhZ8Jy6u9mP7DEUv6DFQqMewzSZtFvSpG42iv_elBYPwzDwvO_AQ8gtZxPOmX3I5lk2EUzwScwF11ackRFXykRWG3ZORozxJLIyYZfkquu2wykVS0bEpXSxaUO7xgY9BCzp0tWuaBu6qKHbAf2Eb1z3rkS6_HGh2FBoSvoB3sGqRpqGgE0PofW0Gmbu6trtMKCPDjma7vdDGQTXNt01uaig7vDmtMfk_ekxm75Es7fn12k6i4o41iFKYi2hskLpAmSlSrNK-IpBiTGIxHJhwXAjjK0KVTCBsYTCaKF5aRRKlCoek_tj7963Xz12Id-2vW-Gl7nQTBmWCMkGih-pwrdd57HK997twP_mnOUHo_nBaH4wmp-MDpm7Y8Yh4j9vNWNSyvgPxaFygw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2605708240</pqid></control><display><type>article</type><title>A Photogenerated Silicon Plasma Waveguide Switch and Variable Attenuator for Millimeter-Wave Applications</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Jones, Thomas R. ; Fisher, Alden ; Barlage, Douglas W. ; Peroulis, Dimitrios</creator><creatorcontrib>Jones, Thomas R. ; Fisher, Alden ; Barlage, Douglas W. ; Peroulis, Dimitrios</creatorcontrib><description>This article reports the design, fabrication, and measurement of a millimeter-wave (mm-wave) solid-state &lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;\pi &lt;/tex-math&gt;&lt;/inline-formula&gt;-match waveguide switch using bulk silicon micromachining. A photogenerated plasma within a silicon post is utilized as the switching element within the waveguide channel. Not only does this isolate the switch bias network from the RF signal path but also allows for tuning of the OFF-state isolation with increasing optical power for application as a variable attenuator. A measured OFF-state isolation greater than 25 dB up to 40 GHz is reported, with a measured extracted ON-state insertion loss of 0.52 dB at 35 GHz, and less than 0.88 dB across the entire band from 30 to 40 GHz. The proposed switch illustrates the significant potential for photogenerated silicon plasma switching of high-performance bulk micromachined mm-wave waveguides.</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2021.3121692</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Attenuators ; Conductivity ; Deep reactive ion etching (DRIE) ; Insertion loss ; Micromachining ; millimeter wave ; Millimeter waves ; Optical attenuators ; Optical device fabrication ; Optical switches ; Optical waveguides ; photogenerated solid-state plasma ; Plasmas ; Silicon ; silicon micromachining ; switch ; Switching ; waveguide ; Waveguides</subject><ispartof>IEEE transactions on microwave theory and techniques, 2021-12, Vol.69 (12), p.5393-5403</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2021</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c336t-8364af9256ca4f5d7b81b0ade3a289129a717279fc5c02e34ac76261d75e4e453</citedby><cites>FETCH-LOGICAL-c336t-8364af9256ca4f5d7b81b0ade3a289129a717279fc5c02e34ac76261d75e4e453</cites><orcidid>0000-0002-2868-2512 ; 0000-0003-2541-4667 ; 0000-0002-4993-1653 ; 0000-0003-1734-1277</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9600444$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Jones, Thomas R.</creatorcontrib><creatorcontrib>Fisher, Alden</creatorcontrib><creatorcontrib>Barlage, Douglas W.</creatorcontrib><creatorcontrib>Peroulis, Dimitrios</creatorcontrib><title>A Photogenerated Silicon Plasma Waveguide Switch and Variable Attenuator for Millimeter-Wave Applications</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>This article reports the design, fabrication, and measurement of a millimeter-wave (mm-wave) solid-state &lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;\pi &lt;/tex-math&gt;&lt;/inline-formula&gt;-match waveguide switch using bulk silicon micromachining. A photogenerated plasma within a silicon post is utilized as the switching element within the waveguide channel. Not only does this isolate the switch bias network from the RF signal path but also allows for tuning of the OFF-state isolation with increasing optical power for application as a variable attenuator. A measured OFF-state isolation greater than 25 dB up to 40 GHz is reported, with a measured extracted ON-state insertion loss of 0.52 dB at 35 GHz, and less than 0.88 dB across the entire band from 30 to 40 GHz. The proposed switch illustrates the significant potential for photogenerated silicon plasma switching of high-performance bulk micromachined mm-wave waveguides.</description><subject>Attenuators</subject><subject>Conductivity</subject><subject>Deep reactive ion etching (DRIE)</subject><subject>Insertion loss</subject><subject>Micromachining</subject><subject>millimeter wave</subject><subject>Millimeter waves</subject><subject>Optical attenuators</subject><subject>Optical device fabrication</subject><subject>Optical switches</subject><subject>Optical waveguides</subject><subject>photogenerated solid-state plasma</subject><subject>Plasmas</subject><subject>Silicon</subject><subject>silicon micromachining</subject><subject>switch</subject><subject>Switching</subject><subject>waveguide</subject><subject>Waveguides</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNo9kE1Lw0AQhhdRsFZ_gHhZ8Jy6u9mP7DEUv6DFQqMewzSZtFvSpG42iv_elBYPwzDwvO_AQ8gtZxPOmX3I5lk2EUzwScwF11ackRFXykRWG3ZORozxJLIyYZfkquu2wykVS0bEpXSxaUO7xgY9BCzp0tWuaBu6qKHbAf2Eb1z3rkS6_HGh2FBoSvoB3sGqRpqGgE0PofW0Gmbu6trtMKCPDjma7vdDGQTXNt01uaig7vDmtMfk_ekxm75Es7fn12k6i4o41iFKYi2hskLpAmSlSrNK-IpBiTGIxHJhwXAjjK0KVTCBsYTCaKF5aRRKlCoek_tj7963Xz12Id-2vW-Gl7nQTBmWCMkGih-pwrdd57HK997twP_mnOUHo_nBaH4wmp-MDpm7Y8Yh4j9vNWNSyvgPxaFygw</recordid><startdate>20211201</startdate><enddate>20211201</enddate><creator>Jones, Thomas R.</creator><creator>Fisher, Alden</creator><creator>Barlage, Douglas W.</creator><creator>Peroulis, Dimitrios</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-2868-2512</orcidid><orcidid>https://orcid.org/0000-0003-2541-4667</orcidid><orcidid>https://orcid.org/0000-0002-4993-1653</orcidid><orcidid>https://orcid.org/0000-0003-1734-1277</orcidid></search><sort><creationdate>20211201</creationdate><title>A Photogenerated Silicon Plasma Waveguide Switch and Variable Attenuator for Millimeter-Wave Applications</title><author>Jones, Thomas R. ; Fisher, Alden ; Barlage, Douglas W. ; Peroulis, Dimitrios</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c336t-8364af9256ca4f5d7b81b0ade3a289129a717279fc5c02e34ac76261d75e4e453</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Attenuators</topic><topic>Conductivity</topic><topic>Deep reactive ion etching (DRIE)</topic><topic>Insertion loss</topic><topic>Micromachining</topic><topic>millimeter wave</topic><topic>Millimeter waves</topic><topic>Optical attenuators</topic><topic>Optical device fabrication</topic><topic>Optical switches</topic><topic>Optical waveguides</topic><topic>photogenerated solid-state plasma</topic><topic>Plasmas</topic><topic>Silicon</topic><topic>silicon micromachining</topic><topic>switch</topic><topic>Switching</topic><topic>waveguide</topic><topic>Waveguides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jones, Thomas R.</creatorcontrib><creatorcontrib>Fisher, Alden</creatorcontrib><creatorcontrib>Barlage, Douglas W.</creatorcontrib><creatorcontrib>Peroulis, Dimitrios</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Xplore</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jones, Thomas R.</au><au>Fisher, Alden</au><au>Barlage, Douglas W.</au><au>Peroulis, Dimitrios</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Photogenerated Silicon Plasma Waveguide Switch and Variable Attenuator for Millimeter-Wave Applications</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>2021-12-01</date><risdate>2021</risdate><volume>69</volume><issue>12</issue><spage>5393</spage><epage>5403</epage><pages>5393-5403</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>This article reports the design, fabrication, and measurement of a millimeter-wave (mm-wave) solid-state &lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;\pi &lt;/tex-math&gt;&lt;/inline-formula&gt;-match waveguide switch using bulk silicon micromachining. A photogenerated plasma within a silicon post is utilized as the switching element within the waveguide channel. Not only does this isolate the switch bias network from the RF signal path but also allows for tuning of the OFF-state isolation with increasing optical power for application as a variable attenuator. A measured OFF-state isolation greater than 25 dB up to 40 GHz is reported, with a measured extracted ON-state insertion loss of 0.52 dB at 35 GHz, and less than 0.88 dB across the entire band from 30 to 40 GHz. The proposed switch illustrates the significant potential for photogenerated silicon plasma switching of high-performance bulk micromachined mm-wave waveguides.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TMTT.2021.3121692</doi><tpages>11</tpages><orcidid>https://orcid.org/0000-0002-2868-2512</orcidid><orcidid>https://orcid.org/0000-0003-2541-4667</orcidid><orcidid>https://orcid.org/0000-0002-4993-1653</orcidid><orcidid>https://orcid.org/0000-0003-1734-1277</orcidid><oa>free_for_read</oa></addata></record>
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1557-9670
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source IEEE Electronic Library (IEL) Journals
subjects Attenuators
Conductivity
Deep reactive ion etching (DRIE)
Insertion loss
Micromachining
millimeter wave
Millimeter waves
Optical attenuators
Optical device fabrication
Optical switches
Optical waveguides
photogenerated solid-state plasma
Plasmas
Silicon
silicon micromachining
switch
Switching
waveguide
Waveguides
title A Photogenerated Silicon Plasma Waveguide Switch and Variable Attenuator for Millimeter-Wave Applications
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T23%3A40%3A15IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20Photogenerated%20Silicon%20Plasma%20Waveguide%20Switch%20and%20Variable%20Attenuator%20for%20Millimeter-Wave%20Applications&rft.jtitle=IEEE%20transactions%20on%20microwave%20theory%20and%20techniques&rft.au=Jones,%20Thomas%20R.&rft.date=2021-12-01&rft.volume=69&rft.issue=12&rft.spage=5393&rft.epage=5403&rft.pages=5393-5403&rft.issn=0018-9480&rft.eissn=1557-9670&rft.coden=IETMAB&rft_id=info:doi/10.1109/TMTT.2021.3121692&rft_dat=%3Cproquest_cross%3E2605708240%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c336t-8364af9256ca4f5d7b81b0ade3a289129a717279fc5c02e34ac76261d75e4e453%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2605708240&rft_id=info:pmid/&rft_ieee_id=9600444&rfr_iscdi=true