Trapping Compensation for Transient Recovery in GaN LNAs

This study reports on the development of a novel trapping-effect compensation circuit (TECC) for improving the transient recovery of a transistor in GaN low-noise amplifiers (LNAs). The proposed TECC uses a transistor with the same type of traps as a compensated transistor in the LNA. The transient...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2024-07, Vol.72 (7), p.4006-4016
Main Authors: Yamaguchi, Yutaro, Nakatani, Keigo, Shinjo, Shintaro, Oishi, Toshiyuki, Miyamoto, Yasuyuki
Format: Article
Language:English
Subjects:
Compensation
Electron emission
Electron traps
Gallium nitrides
GaN-HEMTs
High electron mobility transistors
High temperature
Logic gates
low-noise amplifiers (LNAs)
modeling
Radio frequency
Recovery
recovery characteristics
Resistance
Room temperature
Temperature
Time constant
Transient analysis
Transistors
Trapping
trapping effect
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This study reports on the development of a novel trapping-effect compensation circuit (TECC) for improving the transient recovery of a transistor in GaN low-noise amplifiers (LNAs). The proposed TECC uses a transistor with the same type of traps as a compensated transistor in the LNA. The transient change in the ON-resistance, caused by the traps of the transistor in the TECC, can be used to adaptively change the gate bias of the compensated transistor to improve the recovery characteristics immediately after the overdrive input. Moreover, the recovery characteristics at different temperatures can also be improved by the TECC because the time constant of the traps of the transistor in the TECC varies with the temperature in the same manner as the compensated transistor in the LNA. The recovery characteristics of GaN-HEMT with the TECC were simulated using a large-signal model that considers the trapping effect. The test elementary group (TEG) of the GaN-HEMT with the TECC for the measurement of recovery characteristics was fabricated, and the recovery characteristics were measured at 28 GHz. The output power change \Delta P_{\mathrm {out}} in the recovery characteristics was reduced from 2.4 to 0.2 dB at room temperature (300 K) and from 1.9 to 0.2 dB at high temperature (350 K) by applying the TECC. The measurements confirm the usefulness of the proposed circuit.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2023.3332890