Nonphotolithographic nanoscale memory density prospects

Technologies are now emerging to construct molecular-scale electronic wires and switches using bottom-up self-assembly. This opens the possibility of constructing nanoscale circuits and memories where active devices are just a few nanometers square and wire pitches may be on the order of ten nanomet...

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Bibliographic Details
Published in:IEEE transactions on nanotechnology 2005-03, Vol.4 (2), p.215-228
Main Authors: DeHon, A., Goldstein, S.C., Kuekes, P.J., Lincoln, P.
Format: Article
Language:English
Subjects:
Applied sciences
Circuits
Computer science
Defect tolerance
electronic nanotechnology
Electronics
Exact sciences and technology
Hysteresis
Laboratories
Lithography
memory density
memory organization
Microelectronic fabrication (materials and surfaces technology)
molecular electronics
Molecular electronics, nanoelectronics
Nanoscale devices
Nonvolatile memory
Self-assembly
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Switches
Wires
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Summary:Technologies are now emerging to construct molecular-scale electronic wires and switches using bottom-up self-assembly. This opens the possibility of constructing nanoscale circuits and memories where active devices are just a few nanometers square and wire pitches may be on the order of ten nanometers. The features can be defined at this scale without using photolithography. The available assembly techniques have relatively high defect rates compared to conventional lithographic integrated circuits and can only produce very regular structures. Nonetheless, with proper memory organization, it is reasonable to expect these technologies to provide memory densities in excess of 10/sup 11/ b/cm/sup 2/ with modest active power requirements under 0.6 W/Tb/s for random read operations.
ISSN:1536-125X
1941-0085
DOI:10.1109/TNANO.2004.837849