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Non-quasi-static small-signal modeling and analytical parameter extraction of SOI FinFETs

Accurate modeling and analytical parameter extraction of the non-quasi-static small-signal model of FinFETs are presented using a three-dimensional device simulator. Using simple Y- and Z-matrices calculations, the extrinsic gate-to-drain/source capacitance and source/drain resistance are de-embedde...

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Bibliographic Details
Published in:IEEE transactions on nanotechnology 2006-05, Vol.5 (3), p.205-210
Main Authors: IN MAN KANG, SHIN, Hyungcheol
Format: Article
Language:English
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Summary:Accurate modeling and analytical parameter extraction of the non-quasi-static small-signal model of FinFETs are presented using a three-dimensional device simulator. Using simple Y- and Z-matrices calculations, the extrinsic gate-to-drain/source capacitance and source/drain resistance are de-embedded from the small-signal equivalent circuit. The analytical parameter extractions are performed by Y-parameter analysis after removing the extrinsic gate-to-drain/source capacitance and source/drain resistance. Accuracy of the model and extraction method is verified with the device-simulation data up to 700 GHz. Without any complex fitting and optimization steps, the total modeling rms error of the Y-parameter up to 700 GHz was calculated to be only 1.9 % in the saturation region and 2.1 % in the linear region. Also, the bias dependencies of the small-signal parameters are presented.
ISSN:1536-125X
1941-0085
DOI:10.1109/TNANO.2006.869946