Possibility of Transport Through a Single Acceptor in a Gate-All-Around Silicon Nanowire PMOSFET

Temperature-dependent electrical transport measurements of cylindrical shaped gate-all-around silicon nanowire p-channel MOSFET were performed. At 4.2 K, they show current oscillations, which can be analyzed by single hole tunneling originated from nanowire quantum dots. In addition to this single h...

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Bibliographic Details
Published in:IEEE transactions on nanotechnology 2009-11, Vol.8 (6), p.713-717
Main Authors: Byoung Hak Hong, Young Chai Jung, Jae Sung Rieh, Sung Woo Hwang, Keun Hwi Cho, Yeo, K.H., Suk, S.D., Yeoh, Y.Y., Li, M., Dong-Won Kim, Donggun Park, Kyung Seok Oh, Won-Seong Lee
Format: Article
Language:English
Subjects:
Applied sciences
Atomic measurements
Boron
Charging
Cross-disciplinary physics: materials science
rheology
Electric variables measurement
Electronics
Exact sciences and technology
Gate-all-around (GAA)
Materials science
MOSFET circuits
MOSFETs
Nanocomposites
Nanomaterials
Nanoscale materials and structures: fabrication and characterization
Nanostructure
Nanowires
Performance evaluation
Physics
Quantum dots
Quantum wires
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Shape measurement
Silicon
silicon nanowire FET (SNWFET)
single-acceptor atom
temperature dependence
Temperature measurement
Transistors
Transport
Tunneling
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Description
Summary:Temperature-dependent electrical transport measurements of cylindrical shaped gate-all-around silicon nanowire p-channel MOSFET were performed. At 4.2 K, they show current oscillations, which can be analyzed by single hole tunneling originated from nanowire quantum dots. In addition to this single hole tunneling, one device exhibited strong current peaks, surviving even at room temperature. The separations between these current peaks corresponded to the energy of 25 and 26 meV. These values were consistent with the sum of the bound-state energy spacing and the charging energy of a single boron atom. The radius calculated from the obtained single-atom charging energy was also comparable to the light-hole Bohr radius.
ISSN:1536-125X
1941-0085
DOI:10.1109/TNANO.2009.2021844