Fractal Dimension of Conducting Paths in Nickel Oxide (NiO) Thin Films During Resistance Switching

A resistance-switching model in nickel oxide thin film is proposed based on Poisson distribution of electrical switching power. Conductive percolating network in soft breakdown surface may be the source of resistance switching. The main body of network may remain unchanged, but a portion of network...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on nanotechnology 2010-03, Vol.9 (2), p.131-133
Main Authors: Yoo, In Kyeong, Kang, Bo Soo, Ahn, Seung Eon, Lee, Chang Bum, Lee, Myoung Jae, Park, Gyeong-Su, Li, Xiang-Shu
Format: Article
Language:English
Subjects:
Conductive films
Dielectrics and electrical insulation
Electric breakdown
Electric resistance
Electrodes
Fractal analysis
Fractals
Grain boundaries
Immune system
Networks
Nickel
Nickel oxide
Nickel oxides
resistance switching
soft breakdown
Surface resistance
Switching
switching power
Switching theory
Thin films
Transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A resistance-switching model in nickel oxide thin film is proposed based on Poisson distribution of electrical switching power. Conductive percolating network in soft breakdown surface may be the source of resistance switching. The main body of network may remain unchanged, but a portion of network is broken and healed repeatedly during switching. Dependence of reset current on electrode area is explained by fractal dimension.
ISSN:1536-125X
1941-0085
DOI:10.1109/TNANO.2010.2041670