Bit-to-Bit Interference of Multibit Nanoelectromechanical Memory Cells (T Cells)

The bit-to-bit interference (BI) of multibit nano-electromechanical memory cells (T cells) has been investigated, and an analytical model of BI has been derived. The relationship between the BI and the cell size is discussed using both the analytical and the finite-element-method models. It has been...

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Bibliographic Details
Published in:IEEE transactions on nanotechnology 2014-07, Vol.13 (4), p.659-666
Main Authors: Han, Jae Hwan, Kim, Kwanyong, Choi, Woo Young
Format: Article
Language:English
Subjects:
Analytical models
Finite element analysis
Force
Interference
Mathematical analysis
Mathematical models
Memory (computers)
Nanostructure
Nanotechnology
Structural beams
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Description
Summary:The bit-to-bit interference (BI) of multibit nano-electromechanical memory cells (T cells) has been investigated, and an analytical model of BI has been derived. The relationship between the BI and the cell size is discussed using both the analytical and the finite-element-method models. It has been found that BI is independent of the cell size as long as all the geometrical dimensions are scaled down in proportion. However, in actual cases, BI becomes more severe as the cell size decreases owing to the nonscaling parameters.
ISSN:1536-125X
1941-0085
DOI:10.1109/TNANO.2014.2314217