Back-Biasing to Performance and Reliability Evaluation of UTBB FDSOI, Bulk FinFETs, and SOI FinFETs

FinFETs and ultrathin body and buried oxide fully depleted silicon on insulator (UTBB-FDSOI) are the main transistors currently used in advanced integrated circuits (ICs). The tunable electrical properties via back-biasing facilitate the threshold voltage adjustment and enable IC designers to achiev...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on nanotechnology 2018-01, Vol.17 (1), p.36-40
Main Authors: Chang, Wen-Teng, Shih, Cheng-Ting, Wu, Jhao-Lin, Lin, Shih-Wei, Cin, Li-Gong, Yeh, Wen-Kuan
Format: Article
Language:English
Subjects:
Back-biasing
bulk FinFET
buried oxide
Degradation
downscaling degradation
Electrical properties
FinFETs
hot carrier stress
Integrated circuits
Logic gates
Modulation
MOSFETs
Power consumption
Reliability analysis
Semiconductor devices
Silicon
Silicon-on-insulator
SOI (semiconductors)
SOI FinFET
Threshold voltage
Transistors
UTBB FDSOI
Very large scale integration
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:FinFETs and ultrathin body and buried oxide fully depleted silicon on insulator (UTBB-FDSOI) are the main transistors currently used in advanced integrated circuits (ICs). The tunable electrical properties via back-biasing facilitate the threshold voltage adjustment and enable IC designers to achieve a highly efficient and low-power-consuming operation. This study compares the modulation rate before and after hot carrier stress (HCS) of bulk FinFETs, UTBB-FDSOI ( t BOX = 20 nm), and SOI FinFETs ( t BOX >150 nm) via back-biasing. Simplified back-impedance models are proposed based on the impact of back-biasing on electrical characterization. Additionally, HCS with back-biasing shows a higher impact on UTBB FDSOI than on bulk FinFETs during reliability test, implying that the t BOX plays a critical role in the modulation rate. The lifetime with HCS indicates that the bulk FinFETs exhibit faster downscaling degradation than UTBB FDSOI probably due to the nature of multigate devices whose vertical electrical field should increase faster than planer devices during scaling.
ISSN:1536-125X
1941-0085
DOI:10.1109/TNANO.2017.2706265