Fast Low-Temperature Plasma Process for the Application of Flexible Tin-Oxide-Channel Thin Film Transistors

In this study, we demonstrated a p-type and n-type SnO TFTs on flexible polyimide substrate. The fabricated p-type SnO TFT showed a high I on /I off of 5.7 × 10 5 and a high μFE of 10.7 cm 2 V -1 s -1 . Through optimizing the oxygen plasma condition, the n-type channel TFT transfered from prime p-ty...

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Bibliographic Details
Published in:IEEE transactions on nanotechnology 2017-09, Vol.16 (5), p.876-879
Main Authors: Chen, Po-Chun, Chiu, Yu-Chien, Zheng, Zhi-Wei, Lin, Ming-Huei, Cheng, Chun-Hu, Liou, Guan-Lin, Hsu, Hsiao-Hsuan, Kao, Hsuan-ling
Format: Article
Language:English
Subjects:
Flexible substrate
Iron
plasma
Plasma temperature
Process control
Substrates
Thin film transistors
thin-film transistor (TFT)
Tin
tin oxide (SnO)
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Summary:In this study, we demonstrated a p-type and n-type SnO TFTs on flexible polyimide substrate. The fabricated p-type SnO TFT showed a high I on /I off of 5.7 × 10 5 and a high μFE of 10.7 cm 2 V -1 s -1 . Through optimizing the oxygen plasma condition, the n-type channel TFT transfered from prime p-type channel exhibits excellent characteristics, including a high on/off current ratio of 6.6 × 10 3 , a low threshold voltage of -0.13 V, and a very high field-effect mobility of 28 cm 2 V -1 s -1 . This proposed low-temperature oxygen plasma treatment shows the potential in simplification of TFT process that can achieve n-type and p-type TFTs under the same device process.
ISSN:1536-125X
1941-0085
DOI:10.1109/TNANO.2017.2719946