A Simple Transistor Neutron Hardness Screen Using Scattering Parameters

A frequency domain model of the common emitter S21 parameter of a junction transistor is derived which includes the effect of minority carrier transit time through the active device. Using this model it is demonstrated that the minority carrier transit time can be measured using scattering parameter...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 1973-01, Vol.20 (6), p.361-369
Main Authors: Tausch, H. J., Antinone, R. J., Bailey, R. A.
Format: Article
Language:English
Subjects:
Capacitance
Degradation
Doping profiles
Equations
Frequency dependence
Frequency response
Instruments
Neutrons
Scattering parameters
Space charge
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Description
Summary:A frequency domain model of the common emitter S21 parameter of a junction transistor is derived which includes the effect of minority carrier transit time through the active device. Using this model it is demonstrated that the minority carrier transit time can be measured using scattering parameters. S-parameter derived transit time is used to predict neutron induced gain degradation. A prediction accuracy of approximately 5% is demonstrated.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.1973.4327420