Effects of ionizing radiation on charge-coupled device structures

The effects of ionizing radiation on four different charge-coupled device structures have been investigated. Both shift registers and optical imaging devices have been considered. The electrical and imaging (where appropriate) performance of the devices were evaluated as a function of total gamma ra...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on nuclear science 1974-12, Vol.21 (6), p.193-200
Main Authors: Killiany, J. M., Baker, W. D., Saks, N. S., Barbe, D. F.
Format: Article
Language:English
Subjects:
Charge coupled devices
Clocks
Electrodes
Fats
Interface states
Silicon
Voltage measurement
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c193t-1cf95a712aecce73ccdc81afe0118f96e5395125edae8f2891b275bc105cd35b3
cites
container_end_page 200
container_issue 6
container_start_page 193
container_title IEEE transactions on nuclear science
container_volume 21
creator Killiany, J. M.
Baker, W. D.
Saks, N. S.
Barbe, D. F.
description The effects of ionizing radiation on four different charge-coupled device structures have been investigated. Both shift registers and optical imaging devices have been considered. The electrical and imaging (where appropriate) performance of the devices were evaluated as a function of total gamma ray dose. The principal failure mechanisms have been identified for each particular device structure. Some conclusions about the relative radiation tolerance of the various device designs are drawn.
doi_str_mv 10.1109/TNS.1974.6498927
format article
fullrecord <record><control><sourceid>crossref_ieee_</sourceid><recordid>TN_cdi_crossref_primary_10_1109_TNS_1974_6498927</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6498927</ieee_id><sourcerecordid>10_1109_TNS_1974_6498927</sourcerecordid><originalsourceid>FETCH-LOGICAL-c193t-1cf95a712aecce73ccdc81afe0118f96e5395125edae8f2891b275bc105cd35b3</originalsourceid><addsrcrecordid>eNo9kFFLwzAUhYMoWKfvgi_5A6m5bbMmj2NMJwx9cD6H9PZmRuY6klbQX2_HpnDhcDjn3IePsVuQOYA09-vn1xxMXeXTymhT1GcsA6W0AFXrc5ZJCVqYyphLdpXSx2grJVXGZgvvCfvEO89Dtws_Ybfh0bXB9aPl4-G7ixsS2A37LbW8pa-AxFMfB-yHSOmaXXi3TXRz0gl7e1is50uxenl8ms9WAsGUvQD0RrkaCkeIVJeILWpwniSA9mZKqjQKCkWtI-0LbaApatUgSIVtqZpywuTxL8YupUje7mP4dPHbgrQHBHZEYA8I7AnBOLk7TgIR_df_0l8Iplks</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Effects of ionizing radiation on charge-coupled device structures</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Killiany, J. M. ; Baker, W. D. ; Saks, N. S. ; Barbe, D. F.</creator><creatorcontrib>Killiany, J. M. ; Baker, W. D. ; Saks, N. S. ; Barbe, D. F.</creatorcontrib><description>The effects of ionizing radiation on four different charge-coupled device structures have been investigated. Both shift registers and optical imaging devices have been considered. The electrical and imaging (where appropriate) performance of the devices were evaluated as a function of total gamma ray dose. The principal failure mechanisms have been identified for each particular device structure. Some conclusions about the relative radiation tolerance of the various device designs are drawn.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.1974.6498927</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>IEEE</publisher><subject>Charge coupled devices ; Clocks ; Electrodes ; Fats ; Interface states ; Silicon ; Voltage measurement</subject><ispartof>IEEE transactions on nuclear science, 1974-12, Vol.21 (6), p.193-200</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c193t-1cf95a712aecce73ccdc81afe0118f96e5395125edae8f2891b275bc105cd35b3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6498927$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,54771</link.rule.ids></links><search><creatorcontrib>Killiany, J. M.</creatorcontrib><creatorcontrib>Baker, W. D.</creatorcontrib><creatorcontrib>Saks, N. S.</creatorcontrib><creatorcontrib>Barbe, D. F.</creatorcontrib><title>Effects of ionizing radiation on charge-coupled device structures</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>The effects of ionizing radiation on four different charge-coupled device structures have been investigated. Both shift registers and optical imaging devices have been considered. The electrical and imaging (where appropriate) performance of the devices were evaluated as a function of total gamma ray dose. The principal failure mechanisms have been identified for each particular device structure. Some conclusions about the relative radiation tolerance of the various device designs are drawn.</description><subject>Charge coupled devices</subject><subject>Clocks</subject><subject>Electrodes</subject><subject>Fats</subject><subject>Interface states</subject><subject>Silicon</subject><subject>Voltage measurement</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1974</creationdate><recordtype>article</recordtype><recordid>eNo9kFFLwzAUhYMoWKfvgi_5A6m5bbMmj2NMJwx9cD6H9PZmRuY6klbQX2_HpnDhcDjn3IePsVuQOYA09-vn1xxMXeXTymhT1GcsA6W0AFXrc5ZJCVqYyphLdpXSx2grJVXGZgvvCfvEO89Dtws_Ybfh0bXB9aPl4-G7ixsS2A37LbW8pa-AxFMfB-yHSOmaXXi3TXRz0gl7e1is50uxenl8ms9WAsGUvQD0RrkaCkeIVJeILWpwniSA9mZKqjQKCkWtI-0LbaApatUgSIVtqZpywuTxL8YupUje7mP4dPHbgrQHBHZEYA8I7AnBOLk7TgIR_df_0l8Iplks</recordid><startdate>197412</startdate><enddate>197412</enddate><creator>Killiany, J. M.</creator><creator>Baker, W. D.</creator><creator>Saks, N. S.</creator><creator>Barbe, D. F.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>197412</creationdate><title>Effects of ionizing radiation on charge-coupled device structures</title><author>Killiany, J. M. ; Baker, W. D. ; Saks, N. S. ; Barbe, D. F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c193t-1cf95a712aecce73ccdc81afe0118f96e5395125edae8f2891b275bc105cd35b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1974</creationdate><topic>Charge coupled devices</topic><topic>Clocks</topic><topic>Electrodes</topic><topic>Fats</topic><topic>Interface states</topic><topic>Silicon</topic><topic>Voltage measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Killiany, J. M.</creatorcontrib><creatorcontrib>Baker, W. D.</creatorcontrib><creatorcontrib>Saks, N. S.</creatorcontrib><creatorcontrib>Barbe, D. F.</creatorcontrib><collection>CrossRef</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Killiany, J. M.</au><au>Baker, W. D.</au><au>Saks, N. S.</au><au>Barbe, D. F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of ionizing radiation on charge-coupled device structures</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>1974-12</date><risdate>1974</risdate><volume>21</volume><issue>6</issue><spage>193</spage><epage>200</epage><pages>193-200</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>The effects of ionizing radiation on four different charge-coupled device structures have been investigated. Both shift registers and optical imaging devices have been considered. The electrical and imaging (where appropriate) performance of the devices were evaluated as a function of total gamma ray dose. The principal failure mechanisms have been identified for each particular device structure. Some conclusions about the relative radiation tolerance of the various device designs are drawn.</abstract><pub>IEEE</pub><doi>10.1109/TNS.1974.6498927</doi><tpages>8</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0018-9499
ispartof IEEE transactions on nuclear science, 1974-12, Vol.21 (6), p.193-200
issn 0018-9499
1558-1578
language eng
recordid cdi_crossref_primary_10_1109_TNS_1974_6498927
source IEEE Electronic Library (IEL) Journals
subjects Charge coupled devices
Clocks
Electrodes
Fats
Interface states
Silicon
Voltage measurement
title Effects of ionizing radiation on charge-coupled device structures
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-04T18%3A09%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_ieee_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Effects%20of%20ionizing%20radiation%20on%20charge-coupled%20device%20structures&rft.jtitle=IEEE%20transactions%20on%20nuclear%20science&rft.au=Killiany,%20J.%20M.&rft.date=1974-12&rft.volume=21&rft.issue=6&rft.spage=193&rft.epage=200&rft.pages=193-200&rft.issn=0018-9499&rft.eissn=1558-1578&rft.coden=IETNAE&rft_id=info:doi/10.1109/TNS.1974.6498927&rft_dat=%3Ccrossref_ieee_%3E10_1109_TNS_1974_6498927%3C/crossref_ieee_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c193t-1cf95a712aecce73ccdc81afe0118f96e5395125edae8f2891b275bc105cd35b3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6498927&rfr_iscdi=true