Spectrometer performance of n-type cadmium telluride x- and γ-ray detectors

Highly perfect n-type CdTe single crystals grown by the sealed-ingot-zone refining method have been used to fabricate semiconductor surface-barrier detectors for X- and low-energ, γ-ray analysis. An energy resolution of 2.0 keV /fwhm/ and 1.5 keV /fwhm/ was achieved for 59.5 keV γ-rays from 241 Am a...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 1976-02, Vol.23 (1), p.171-176
Main Authors: Dabrowski, A. J., Chwaszczewska, J., Iwanczyk, J., Triboulet, R., Marfaing, Y.
Format: Article
Language:English
Subjects:
Cadmium compounds
Crystalline materials
Crystals
Detectors
Energy resolution
Gamma ray detection
Low voltage
Pulse amplifiers
Spectroscopy
Temperature measurement
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Summary:Highly perfect n-type CdTe single crystals grown by the sealed-ingot-zone refining method have been used to fabricate semiconductor surface-barrier detectors for X- and low-energ, γ-ray analysis. An energy resolution of 2.0 keV /fwhm/ and 1.5 keV /fwhm/ was achieved for 59.5 keV γ-rays from 241 Am and 5.9 keV characteristic K X-ray line from 55 Fe source, respectively. Spectra were measured at room temperature with low detector bias. The observed full energy peak of 59.5 keV γ-rays has been compared with the teoretical peak calculated for a surface-barrier junction with fixed space charge, the trapping effects being taken into account.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.1976.4328232