Thermal Annealing of Radiation Damage in CMOS ICs in the Temperature Range -140°C to +375°C

• Published in: IEEE transactions on nuclear science 1982-12, Vol.29 (6), p.1716-1720, Article 1716
• Main Authors: Danchenko, Vitaly, Fang, P. H., Brashears, Sidney S.
• Format: Article
• Language: English
• Subjects: CMOS integrated circuits; Educational institutions; Electrons; Gamma rays; Ionizing radiation; Manufacturing processes; Physics; Radiation hardening; Rapid thermal annealing; Temperature distribution
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/TNS.1982.4336435

Annealing of radiation damage was investigated in the commercial,Z-and J-processes of the RCA CD4007A ICs in the temperature range from -140°C to +375°C. Tempering curves were analyzed for activation energies of thermal annealing, following irradiation at -140°C. It was found that at -140°C, the radiation-induced shifts in the threshold potentials were similar for all three processes. The radiation hardness of the Z-and J-processes is primarily due to rapid annealing of radiation damage at room temperature. In the region -140 to 20°C, no dopant-dependent charge trapping is seen, similar to that observed at higher temperatures. In the unbiased Z-process n-channels, after 1 MeV electron irradiation, considerable negative charge remains in the gate oxide.