Generation of Interface States by Ionizing Radiation in Very Thin MOS Oxides

The creation of interface states Dit by ionizing radiation is investigated in MOS capacitors as a function of oxide thickness in the range 6-50 nm. A comparison of the thickness dependence in etchback and asgrown oxides supports the idea that the number of defects at the Si-SiO2 interface increases...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 1986-12, Vol.33 (6), p.1185-1190
Main Authors: Saks, Nelson S., Ancona, Mario G., Modolo, John A.
Format: Article
Language:English
Subjects:
Annealing
Chemicals
Etching
Interface states
Ionizing radiation
MOS capacitors
Oxidation
Temperature dependence
Thickness measurement
Tunneling
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Summary:The creation of interface states Dit by ionizing radiation is investigated in MOS capacitors as a function of oxide thickness in the range 6-50 nm. A comparison of the thickness dependence in etchback and asgrown oxides supports the idea that the number of defects at the Si-SiO2 interface increases with oxidation time. For relatively thin oxides (tox
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.1986.4334576