Effect of Dose History on SEGR Properties of Power MOSFETS

We present data that show that proton radiation damage can influence the single event gate rupture response of a power MOSFET. A primary phenomenon of single event gate rupture, the drain to gate threshold at which single event gate rupture occurs, drops as a function of device dosage. The shift in...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2007-12, Vol.54 (6), p.2568-2575
Main Authors: Scheick, L.Z., Selva, L.E.
Format: Article
Language:English
Subjects:
Atomic layer deposition
Atomic measurements
Charge
Devices
Energy management
Field strength
Gates
History
Laboratories
MOSFETs
Nuclear power generation
Power MOSFET
proton dose
Protons
Radiation effects
Rupture
single event gate rupture
Stress
Threshold voltage
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Summary:We present data that show that proton radiation damage can influence the single event gate rupture response of a power MOSFET. A primary phenomenon of single event gate rupture, the drain to gate threshold at which single event gate rupture occurs, drops as a function of device dosage. The shift in the threshold voltage correlates the best with the drop in the voltage at which SEGR occurs. The increase in the field strength due to trapped charges within the oxide during a charge collection event is suspected as the mechanism.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2007.910127