SEB Characterization of Commercial Power MOSFETs With Backside Laser and Heavy Ions of Different Ranges

This paper presents a validation of the methodology based upon backside laser irradiations to characterize the sensitivity of power devices towards single-event burnout. This is done thanks to high-energy heavy ion testing and device simulations.

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2008-08, Vol.55 (4), p.2166-2173
Main Authors: Luu, A., Miller, F., Poirot, P., Gaillard, R., Buard, N., Carriere, T., Austin, P., Bafleur, M., Sarrabayrouse, G.
Format: Article
Language:English
Subjects:
Analytical models
Application software
Commercial power MOSFETs
Devices
Fuel consumption
Guidelines
heavy ion tests
Heavy ions
Irradiation
laser tests
Lasers
Manufacturing
MOSFETs
Neutrons
Nuclear power generation
Power lasers
Protons
Simulation
single-event burnout (SEB)
software simulations
Software testing
Strips
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Description
Summary:This paper presents a validation of the methodology based upon backside laser irradiations to characterize the sensitivity of power devices towards single-event burnout. This is done thanks to high-energy heavy ion testing and device simulations.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2008.921934