Evaluation of the Concentration of Deep Levels in Semi-Insulating CdTe by Photoconductivity and TEES

The concentrations of near-midgap levels in high-resistivity CdTe were estimated based on a combined evaluation of room temperature lux-ampere characteristics and thermoelectric effect spectroscopy measurements (77-400 K). A simulation of experimental data was performed by a numerical solution of dr...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2009-08, Vol.56 (4), p.1706-1711
Main Authors: Kubat, J., Elhadidy, H., Franc, J., Grill, R., Belas, E., Hoschl, P., Praus, P.
Format: Article
Language:English
Subjects:
Crystals
Deep levels
Electron traps
high-resistivity
Performance evaluation
Photoconductivity
photoelectric measurements
Semiconductor process modeling
Space charge
Spectroscopy
Steady-state
Thermoelectricity
Tin
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Summary:The concentrations of near-midgap levels in high-resistivity CdTe were estimated based on a combined evaluation of room temperature lux-ampere characteristics and thermoelectric effect spectroscopy measurements (77-400 K). A simulation of experimental data was performed by a numerical solution of drift-diffusion and Poisson equations using a model with two deep levels. A comparison of crystals doped with shallow and deep dopants is given.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2009.2022162