Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies

Factors that affect single-event transient pulse widths, such as drift, diffusion, and parasitic bipolar transistor parameters, are also strong functions of operating temperature. In this paper, SET pulse-width measurements are performed over a wide temperature range in both bulk and fully-depleted...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2009-12, Vol.56 (6), p.3115-3121
Main Authors: Gadlage, M.J., Ahlbin, J.R., Ramachandran, V., Gouker, P., Dinkins, C.A., Bhuva, B.L., Narasimham, B., Schrimpf, R.D., McCurdy, M.W., Alles, M.L., Reed, R.A., Mendenhall, M.H., Massengill, L.W., Shuler, R.L., McMorrow, D.
Format: Article
Language:English
Subjects:
Bipolar transistors
Circuit testing
CMOS technology
Diffusion
Digital
Drift
Heavy ions
Insulators
ion radiation effects
Operating temperature
Pulse circuits
Pulse inverters
Pulse measurements
Pulse width modulation inverters
Silicon
Silicon on insulator technology
single event transients
single event upset (SEU)
Space vector pulse width modulation
Temperature dependence
Temperature distribution
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Summary:Factors that affect single-event transient pulse widths, such as drift, diffusion, and parasitic bipolar transistor parameters, are also strong functions of operating temperature. In this paper, SET pulse-width measurements are performed over a wide temperature range in both bulk and fully-depleted SOI (silicon on insulator) technologies. The average pulse-width increases with temperature for the bulk process, but not for the FDSOI process.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2009.2034150