Effects of Halo Doping and Si Capping Layer Thickness on Total-Dose Effects in Ge p-MOSFETs

The total-dose response of Ge p-MOSFETs and p + -n junction diodes is reported for devices fabricated with several process variations. Radiation-induced reduction of the on-off current ratio increases with halo-doping density. Increasing the number of Si monolayers at the substrate/dielectric interf...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2010-08, Vol.57 (4), p.1933-1939
Main Authors: Arora, R, Simoen, E, En Xia Zhang, Fleetwood, D M, Schrimpf, R D, Galloway, K F, Choi, B K, Mitard, J, Meuris, M, Claeys, C, Madan, A, Cressler, J D
Format: Article
Language:English
Subjects:
Density
Devices
Dielectric devices
Dielectric materials
Dielectric substrates
Dielectrics
Diode
Diodes
Doping
Germanium
Hafnium oxide
Leakage current
Monolayers
MOSFET
MOSFET circuits
Silicon
Silicon substrates
x-ray
{\rm p}^{+} -n
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Summary:The total-dose response of Ge p-MOSFETs and p + -n junction diodes is reported for devices fabricated with several process variations. Radiation-induced reduction of the on-off current ratio increases with halo-doping density. Increasing the number of Si monolayers at the substrate/dielectric interface reduces total-dose sensitivity for p-MOSFETs. Reduced mobility degradation is observed after irradiation for devices with a higher number of Si monolayers. The radiation-induced increase in junction leakage is related to the increasing perimeter component of the leakage current. MOSFETs with a higher number of Si monolayers at the dielectric/substrate interface also have reduced perimeter leakage current. Diode leakage current increases with increasing halo-doping density.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2010.2043745