Fast High-Flux Response of CdZnTe X-Ray Detectors by Optical Manipulation of Deep Level Defect Occupations

We experimentally investigate the possible correlation between high hole-trap concentrations in wide-bandgap semiconductors and delayed temporal response of high-flux x-ray detector devices to changing photon fluxes. We show that fast photo-current response can be achieved with (1) CdZnTe detectors...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2010-08, Vol.57 (4), p.2397-2399
Main Authors: Prokesch, M, Bale, D S, Szeles, C
Format: Article
Language:English
Subjects:
Biomedical optical imaging
CdZnTe
Delay
infra-red
Optical imaging
Photoconductivity
photocurrent
semiconductor radiation detectors
Space charge
Steady-state
Temperature
temporal response
X-ray detection
X-ray detectors
X-ray imaging
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Summary:We experimentally investigate the possible correlation between high hole-trap concentrations in wide-bandgap semiconductors and delayed temporal response of high-flux x-ray detector devices to changing photon fluxes. We show that fast photo-current response can be achieved with (1) CdZnTe detectors with high hole mobility-lifetime products, (2) temperature increased detrapping, and (3) constant below-bandgap energy light illumination that modifies the dark defect occupation towards a steady-state with a reduced concentration of active hole traps. This way, the detector signal stabilizes immediately upon flux onset, independent of details of the semiconductor's point defect structure. Quasi-instantaneous response stabilization ( 10 7 photons mm -2 s -1 is demonstrated.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2010.2049120