Failure Analysis and Radiation-Enabled Circuit Simulation of a Dual Charge Pump Circuit

Dual charge pump data show a reduction of circuit output voltage with dose. Through testing of individual process monitors, the response is identified as parasitic interdevice leakage caused by trapped oxide charge buildup in the isolation oxide. A library of compact models is generated for the fiel...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2010-12, Vol.57 (6), p.3609-3614
Main Authors: Schlenvogt, Garrett James, Barnaby, H J, Esqueda, I S, Holbert, K E, Wilkinson, J, Morrison, S, Tyler, L
Format: Article
Language:English
Subjects:
Charge pump
Charge pumps
Circuit simulation
Circuits
Computer simulation
Construction
Devices
Failure analysis
interdevice leakage
LOCOS
oxide trapped charge
Oxides
radiation
Reduction
Simulation
total ionizing dose
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Summary:Dual charge pump data show a reduction of circuit output voltage with dose. Through testing of individual process monitors, the response is identified as parasitic interdevice leakage caused by trapped oxide charge buildup in the isolation oxide. A library of compact models is generated for the field oxide parasitic based on test structure data along with 2-D structure simulation results. The charge pump schematic is then back annotated with transistors representative of the parasitic at different dose levels. Inclusion of the parasitic devices in schematic allows for simulation of the entire circuit at a specific dose. The reduction of circuit output with dose is then re-created in simulation.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2010.2079951