Failure Analysis and Radiation-Enabled Circuit Simulation of a Dual Charge Pump Circuit

Dual charge pump data show a reduction of circuit output voltage with dose. Through testing of individual process monitors, the response is identified as parasitic interdevice leakage caused by trapped oxide charge buildup in the isolation oxide. A library of compact models is generated for the fiel...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on nuclear science 2010-12, Vol.57 (6), p.3609-3614
Main Authors: Schlenvogt, Garrett James, Barnaby, H J, Esqueda, I S, Holbert, K E, Wilkinson, J, Morrison, S, Tyler, L
Format: Article
Language:English
Subjects:
Charge pump
Charge pumps
Circuit simulation
Circuits
Computer simulation
Construction
Devices
Failure analysis
interdevice leakage
LOCOS
oxide trapped charge
Oxides
radiation
Reduction
Simulation
total ionizing dose
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c324t-41aacc0700ac5634e728372d58e889b3a79afbb5638ff9f40a33dc8998d3c3323
cites cdi_FETCH-LOGICAL-c324t-41aacc0700ac5634e728372d58e889b3a79afbb5638ff9f40a33dc8998d3c3323
container_end_page 3614
container_issue 6
container_start_page 3609
container_title IEEE transactions on nuclear science
container_volume 57
creator Schlenvogt, Garrett James
Barnaby, H J
Esqueda, I S
Holbert, K E
Wilkinson, J
Morrison, S
Tyler, L
description Dual charge pump data show a reduction of circuit output voltage with dose. Through testing of individual process monitors, the response is identified as parasitic interdevice leakage caused by trapped oxide charge buildup in the isolation oxide. A library of compact models is generated for the field oxide parasitic based on test structure data along with 2-D structure simulation results. The charge pump schematic is then back annotated with transistors representative of the parasitic at different dose levels. Inclusion of the parasitic devices in schematic allows for simulation of the entire circuit at a specific dose. The reduction of circuit output with dose is then re-created in simulation.
doi_str_mv 10.1109/TNS.2010.2079951
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1109_TNS_2010_2079951</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5658007</ieee_id><sourcerecordid>2769326401</sourcerecordid><originalsourceid>FETCH-LOGICAL-c324t-41aacc0700ac5634e728372d58e889b3a79afbb5638ff9f40a33dc8998d3c3323</originalsourceid><addsrcrecordid>eNpdkD1PwzAQhi0EEqWwI7FYYmFJseM4sccqtIBUAaJFjNHFccBVPoodD_33uLQwMJ1e3fOedA9Cl5RMKCXydvW0nMQkpJhkUnJ6hEaUcxFRnoljNCKEikgmUp6iM-fWISac8BF6n4NpvNV42kGzdcZh6Cr8CpWBwfRdNOugbHSFc2OVNwNemtY3Pyvc1xjwnYcG559gPzR-8e3mFzxHJzU0Tl8c5hi9zWer_CFaPN8_5tNFpFicDFFCAZQiGSGgeMoSncWCZXHFhRZClgwyCXVZhpWoa1knBBirlJBSVEwxFrMxutnf3dj-y2s3FK1xSjcNdLr3rqBpRuOEM7lDr_-h697b8HagSCpjnkgiAkX2lLK9c1bXxcaaFuw2QMXOdBFMFzvTxcF0qFztK0Zr_YfzlAtCMvYNaMl4Pw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1069254908</pqid></control><display><type>article</type><title>Failure Analysis and Radiation-Enabled Circuit Simulation of a Dual Charge Pump Circuit</title><source>IEEE Xplore (Online service)</source><creator>Schlenvogt, Garrett James ; Barnaby, H J ; Esqueda, I S ; Holbert, K E ; Wilkinson, J ; Morrison, S ; Tyler, L</creator><creatorcontrib>Schlenvogt, Garrett James ; Barnaby, H J ; Esqueda, I S ; Holbert, K E ; Wilkinson, J ; Morrison, S ; Tyler, L</creatorcontrib><description>Dual charge pump data show a reduction of circuit output voltage with dose. Through testing of individual process monitors, the response is identified as parasitic interdevice leakage caused by trapped oxide charge buildup in the isolation oxide. A library of compact models is generated for the field oxide parasitic based on test structure data along with 2-D structure simulation results. The charge pump schematic is then back annotated with transistors representative of the parasitic at different dose levels. Inclusion of the parasitic devices in schematic allows for simulation of the entire circuit at a specific dose. The reduction of circuit output with dose is then re-created in simulation.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2010.2079951</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Charge pump ; Charge pumps ; Circuit simulation ; Circuits ; Computer simulation ; Construction ; Devices ; Failure analysis ; interdevice leakage ; LOCOS ; oxide trapped charge ; Oxides ; radiation ; Reduction ; Simulation ; total ionizing dose</subject><ispartof>IEEE transactions on nuclear science, 2010-12, Vol.57 (6), p.3609-3614</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Dec 2010</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c324t-41aacc0700ac5634e728372d58e889b3a79afbb5638ff9f40a33dc8998d3c3323</citedby><cites>FETCH-LOGICAL-c324t-41aacc0700ac5634e728372d58e889b3a79afbb5638ff9f40a33dc8998d3c3323</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5658007$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Schlenvogt, Garrett James</creatorcontrib><creatorcontrib>Barnaby, H J</creatorcontrib><creatorcontrib>Esqueda, I S</creatorcontrib><creatorcontrib>Holbert, K E</creatorcontrib><creatorcontrib>Wilkinson, J</creatorcontrib><creatorcontrib>Morrison, S</creatorcontrib><creatorcontrib>Tyler, L</creatorcontrib><title>Failure Analysis and Radiation-Enabled Circuit Simulation of a Dual Charge Pump Circuit</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>Dual charge pump data show a reduction of circuit output voltage with dose. Through testing of individual process monitors, the response is identified as parasitic interdevice leakage caused by trapped oxide charge buildup in the isolation oxide. A library of compact models is generated for the field oxide parasitic based on test structure data along with 2-D structure simulation results. The charge pump schematic is then back annotated with transistors representative of the parasitic at different dose levels. Inclusion of the parasitic devices in schematic allows for simulation of the entire circuit at a specific dose. The reduction of circuit output with dose is then re-created in simulation.</description><subject>Charge pump</subject><subject>Charge pumps</subject><subject>Circuit simulation</subject><subject>Circuits</subject><subject>Computer simulation</subject><subject>Construction</subject><subject>Devices</subject><subject>Failure analysis</subject><subject>interdevice leakage</subject><subject>LOCOS</subject><subject>oxide trapped charge</subject><subject>Oxides</subject><subject>radiation</subject><subject>Reduction</subject><subject>Simulation</subject><subject>total ionizing dose</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNpdkD1PwzAQhi0EEqWwI7FYYmFJseM4sccqtIBUAaJFjNHFccBVPoodD_33uLQwMJ1e3fOedA9Cl5RMKCXydvW0nMQkpJhkUnJ6hEaUcxFRnoljNCKEikgmUp6iM-fWISac8BF6n4NpvNV42kGzdcZh6Cr8CpWBwfRdNOugbHSFc2OVNwNemtY3Pyvc1xjwnYcG559gPzR-8e3mFzxHJzU0Tl8c5hi9zWer_CFaPN8_5tNFpFicDFFCAZQiGSGgeMoSncWCZXHFhRZClgwyCXVZhpWoa1knBBirlJBSVEwxFrMxutnf3dj-y2s3FK1xSjcNdLr3rqBpRuOEM7lDr_-h697b8HagSCpjnkgiAkX2lLK9c1bXxcaaFuw2QMXOdBFMFzvTxcF0qFztK0Zr_YfzlAtCMvYNaMl4Pw</recordid><startdate>201012</startdate><enddate>201012</enddate><creator>Schlenvogt, Garrett James</creator><creator>Barnaby, H J</creator><creator>Esqueda, I S</creator><creator>Holbert, K E</creator><creator>Wilkinson, J</creator><creator>Morrison, S</creator><creator>Tyler, L</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7QL</scope><scope>7QQ</scope><scope>7SC</scope><scope>7SE</scope><scope>7SP</scope><scope>7SR</scope><scope>7T7</scope><scope>7TA</scope><scope>7TB</scope><scope>7U5</scope><scope>7U9</scope><scope>8BQ</scope><scope>8FD</scope><scope>C1K</scope><scope>F28</scope><scope>FR3</scope><scope>H8D</scope><scope>H94</scope><scope>JG9</scope><scope>JQ2</scope><scope>KR7</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>M7N</scope><scope>P64</scope></search><sort><creationdate>201012</creationdate><title>Failure Analysis and Radiation-Enabled Circuit Simulation of a Dual Charge Pump Circuit</title><author>Schlenvogt, Garrett James ; Barnaby, H J ; Esqueda, I S ; Holbert, K E ; Wilkinson, J ; Morrison, S ; Tyler, L</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c324t-41aacc0700ac5634e728372d58e889b3a79afbb5638ff9f40a33dc8998d3c3323</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Charge pump</topic><topic>Charge pumps</topic><topic>Circuit simulation</topic><topic>Circuits</topic><topic>Computer simulation</topic><topic>Construction</topic><topic>Devices</topic><topic>Failure analysis</topic><topic>interdevice leakage</topic><topic>LOCOS</topic><topic>oxide trapped charge</topic><topic>Oxides</topic><topic>radiation</topic><topic>Reduction</topic><topic>Simulation</topic><topic>total ionizing dose</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Schlenvogt, Garrett James</creatorcontrib><creatorcontrib>Barnaby, H J</creatorcontrib><creatorcontrib>Esqueda, I S</creatorcontrib><creatorcontrib>Holbert, K E</creatorcontrib><creatorcontrib>Wilkinson, J</creatorcontrib><creatorcontrib>Morrison, S</creatorcontrib><creatorcontrib>Tyler, L</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE/IET Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Bacteriology Abstracts (Microbiology B)</collection><collection>Ceramic Abstracts</collection><collection>Computer and Information Systems Abstracts</collection><collection>Corrosion Abstracts</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Industrial and Applied Microbiology Abstracts (Microbiology A)</collection><collection>Materials Business File</collection><collection>Mechanical &amp; Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Virology and AIDS Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>ANTE: Abstracts in New Technology &amp; Engineering</collection><collection>Engineering Research Database</collection><collection>Aerospace Database</collection><collection>AIDS and Cancer Research Abstracts</collection><collection>Materials Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts – Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>Algology Mycology and Protozoology Abstracts (Microbiology C)</collection><collection>Biotechnology and BioEngineering Abstracts</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Schlenvogt, Garrett James</au><au>Barnaby, H J</au><au>Esqueda, I S</au><au>Holbert, K E</au><au>Wilkinson, J</au><au>Morrison, S</au><au>Tyler, L</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Failure Analysis and Radiation-Enabled Circuit Simulation of a Dual Charge Pump Circuit</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>2010-12</date><risdate>2010</risdate><volume>57</volume><issue>6</issue><spage>3609</spage><epage>3614</epage><pages>3609-3614</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>Dual charge pump data show a reduction of circuit output voltage with dose. Through testing of individual process monitors, the response is identified as parasitic interdevice leakage caused by trapped oxide charge buildup in the isolation oxide. A library of compact models is generated for the field oxide parasitic based on test structure data along with 2-D structure simulation results. The charge pump schematic is then back annotated with transistors representative of the parasitic at different dose levels. Inclusion of the parasitic devices in schematic allows for simulation of the entire circuit at a specific dose. The reduction of circuit output with dose is then re-created in simulation.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TNS.2010.2079951</doi><tpages>6</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0018-9499
ispartof IEEE transactions on nuclear science, 2010-12, Vol.57 (6), p.3609-3614
issn 0018-9499
1558-1578
language eng
recordid cdi_crossref_primary_10_1109_TNS_2010_2079951
source IEEE Xplore (Online service)
subjects Charge pump
Charge pumps
Circuit simulation
Circuits
Computer simulation
Construction
Devices
Failure analysis
interdevice leakage
LOCOS
oxide trapped charge
Oxides
radiation
Reduction
Simulation
total ionizing dose
title Failure Analysis and Radiation-Enabled Circuit Simulation of a Dual Charge Pump Circuit
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T08%3A15%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Failure%20Analysis%20and%20Radiation-Enabled%20Circuit%20Simulation%20of%20a%20Dual%20Charge%20Pump%20Circuit&rft.jtitle=IEEE%20transactions%20on%20nuclear%20science&rft.au=Schlenvogt,%20Garrett%20James&rft.date=2010-12&rft.volume=57&rft.issue=6&rft.spage=3609&rft.epage=3614&rft.pages=3609-3614&rft.issn=0018-9499&rft.eissn=1558-1578&rft.coden=IETNAE&rft_id=info:doi/10.1109/TNS.2010.2079951&rft_dat=%3Cproquest_cross%3E2769326401%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c324t-41aacc0700ac5634e728372d58e889b3a79afbb5638ff9f40a33dc8998d3c3323%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1069254908&rft_id=info:pmid/&rft_ieee_id=5658007&rfr_iscdi=true