Alpha-Particle and Focused-Ion-Beam-Induced Single-Event Transient Measurements in a Bulk 65-nm CMOS Technology

Pulse widths of single-event transients produced by alpha particles in a 65-nm bulk CMOS technology are reported. The experimental setup and calibration of the alpha particle experiment is described in detail. A focused-ion beam is also utilized to explore how pulse broadening in the test circuit im...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2011-06, Vol.58 (3), p.1093-1097
Main Authors: Gadlage, M J, Ahlbin, J R, Bhuva, B L, Hooten, N C, Dodds, N A, Reed, R A, Massengill, L W, Schrimpf, R D, Vizkelethy, G
Format: Article
Language:English
Subjects:
Alpha particles
Alpha rays
Atmospheric measurements
Beams (structural)
Calibration
Circuits
CMOS
CMOS integrated circuits
heavy ions
Inverters
Particle measurements
Pulse measurements
Pulse width
single-event transients
soft error
Transient analysis
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Description
Summary:Pulse widths of single-event transients produced by alpha particles in a 65-nm bulk CMOS technology are reported. The experimental setup and calibration of the alpha particle experiment is described in detail. A focused-ion beam is also utilized to explore how pulse broadening in the test circuit impacts the alpha particle SET measurements. The results of this work show that alpha particles are able to induce transient signals with a width of about 25 ps in this technology.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2011.2112378